位置：首页 > IC中文资料第3315页 > TSM75N03CP
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TSM75N03CP | N-Channel 30-V (D-S) MOSFET 文件：1.00304 Mbytes Page：7 Pages | VBSEMI 微碧半导体 |   | |
N-Channel 30-V (D-S) MOSFET 文件：1.00302 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
25V N-Channel MOSFET 文件：65.36 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.00153 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Enhancement-Mode MOSFET 文件：102.05 Kbytes Page：5 Pages | GE | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：243.87 Kbytes Page：4 Pages | GTM 勤益投资控股 | |
TSM75N03CP产品属性
- 类型
描述
- 型号
TSM75N03CP
- 功能描述
MOSFET 25V N channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC |
24+ |
TO-252 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
taiwansemi |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
TSC |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
TSC |
24+ |
TO-252 |
25836 |
新到现货，只做全新原装正品 |
|||
TSC |
22+ |
TO-252 |
20000 |
公司只做原装 品质保证 |
|||
TSC/台湾半导体 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
TSC |
25+ |
TO-252 |
14146 |
||||
TSC |
23+ |
SON8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
T |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
|||
TSC |
26+ |
TO-252 |
12000 |
原装，正品 |
TSM75N03CP规格书下载地址
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DdatasheetPDF页码索引
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