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TSM5NC50CF

Advanced planar process

文件:413.03 Kbytes Page:6 Pages

TSC

台湾半导体

TSM5NC50CF

500V, 5A, Single N-Channel Power MOSFET

TSC

台湾半导体

Halogen-free according to IEC 61249-2-21

文件:312.52 Kbytes Page:6 Pages

TSC

台湾半导体

N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

STMICROELECTRONICS

意法半导体

TSM5NC50CF产品属性

  • 类型

    描述

  • Type:

    N-Channel

  • Technology:

    Planar

  • Configuration:

    Single

  • Status:

    NRND

  • AEC-Q:

    No

  • VDS (V):

    500

  • VGS ±(V):

    30

  • ID Max. (A):

    5

  • TJ Max. (°C):

    150

  • RDS(ON) @ 10V Max. (mΩ):

    1380

  • RDS(ON) @ 10V Typ. (mΩ):

    1100

  • Qg (nC) @ 10V:

    15

  • Qgd (nC):

    7

  • Qgs (nC):

    4

  • Ciss (pF):

    586

  • Coss (pF):

    45

  • Crss (pF):

    1

  • MSL:

    NA

  • VGS(th) Max. (V):

    4.5

  • VGS(th) Min. (V):

    2.5

  • VGS(th) Typ. (V):

    3.3

更新时间:2026-5-24 15:14:00
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