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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP5NC50 | N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
STP5NC50 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：1.10907 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
STP5NC50产品属性
- 类型
描述
- 型号
STP5NC50
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
8795 |
||||
ST |
TO220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
10+ |
TO220 |
48 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
24+ |
NA/ |
16250 |
原厂直销,现货供应,账期支持! |
|||
ST |
17+ |
TO-220 |
6200 |
||||
ST |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
ST |
24+ |
TO-220 |
5000 |
原装现货热卖 |
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ST |
23+ |
TO220 |
8560 |
受权代理!全新原装现货特价热卖! |
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ST |
24+ |
TO-220 |
2000 |
||||
ST |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
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DdatasheetPDF页码索引
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