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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP5NC50 | N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS | STMICROELECTRONICS 意法半导体 |   | |
STP5NC50 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650V (D-S)Power MOSFET 文件：1.10907 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
STP5NC50产品属性
- 类型
描述
- 型号
STP5NC50
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
ST |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
|||
ST |
24+ |
TO-220 |
2000 |
||||
ST |
TO220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
24+ |
TO-220F |
5000 |
原装现货热卖 |
|||
ST |
25+ |
TO220F |
3358 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
STP5NC50规格书下载地址
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