Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

600V N-Channel Power MOSFET

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600V N-Channel Power MOSFET

文件：477.85 Kbytes Page：9 Pages

600V N-Channel Power MOSFET

文件：369.36 Kbytes Page：11 Pages

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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4 Amps竊?00Volts N-Channel MOSFET

文件：543.79 Kbytes Page：5 Pages

N-Channel Power MOSFET

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N-CHANNEL POWER MOSFET

文件：607.6 Kbytes Page：7 Pages