型号 功能描述 生产厂家&企业 LOGO 操作
4N60

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

4N60

N-channel power MOS tube

Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

4N60

4 Amps竊?00Volts N-Channel MOSFET

文件:543.79 Kbytes Page:5 Pages

ESTEK

伊泰克电子

4N60

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:397.76 Kbytes Page:8 Pages

UTC

友顺

4N60

N-Channel Power MOSFET

文件:987.64 Kbytes Page:7 Pages

ARTSCHIP

4N60

N-CHANNEL POWER MOSFET

文件:607.6 Kbytes Page:7 Pages

ZSELEC

淄博圣诺电子

4N60

600V N-Channel Power MOSFET

文件:2.51249 Mbytes Page:10 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

4N60

Avalanche Energy Specified

文件:157 Kbytes Page:2 Pages

ISC

无锡固电

4N60

4A, 600V N-CHANNEL POWER MOSFET

文件:408.85 Kbytes Page:9 Pages

UTC

友顺

4N60

N-CHANNEL POWER MOSFET

文件:2.76231 Mbytes Page:9 Pages

SUNMATE

森美特

4N60

TO-25 1 Pla s t ic-Encapsulate MOSFET

文件:2.94341 Mbytes Page:3 Pages

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

4N60

4A mps,600 Volts N-CHANNEL MOSFET

文件:200.75 Kbytes Page:2 Pages

CHONGQING

重庆平伟实业

4N60

N-Channel Power MOSFET

文件:479.31 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

4N60

4A, 600V N-CHANNEL POWER MOSFET

文件:376.13 Kbytes Page:8 Pages

UTC

友顺

4N60

N-Channel 650 V (D-S) MOSFET

文件:1.09859 Mbytes Page:9 Pages

VBSEMI

微碧半导体

4N60

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:432.12 Kbytes Page:9 Pages

UTC

友顺

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100 avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

EVVOSEMI

翊欧

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

EVVOSEMI

翊欧

N-channel power MOS tube

Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

4.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N60-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi

UTC

友顺

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

EVVOSEMI

翊欧

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

4.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N60-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi

UTC

友顺

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

EVVOSEMI

翊欧

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:397.76 Kbytes Page:8 Pages

UTC

友顺

4A, 600V N-CHANNEL POWER MOSFET

文件:376.13 Kbytes Page:8 Pages

UTC

友顺

4A, 600V N-CHANNEL POWER MOSFET

文件:408.85 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:432.12 Kbytes Page:9 Pages

UTC

友顺

isc N-Channel MOSFET Transistor

文件:167.06 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:162.18 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:175.68 Kbytes Page:3 Pages

ISC

无锡固电

4A 600V N-channel enhanced field effect transistor

文件:1.06546 Mbytes Page:7 Pages

YFWDIODE

佑风微电子

isc N-Channel MOSFET Transistor

文件:284.18 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:1.07614 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:253.94 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:2.76231 Mbytes Page:9 Pages

SUNMATE

森美特

N-CHANNEL JUNCTIN SILICON FET

文件:262.1 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:2.76231 Mbytes Page:9 Pages

SUNMATE

森美特

N-CHANNEL POWER MOSFET

文件:2.76231 Mbytes Page:9 Pages

SUNMATE

森美特

4A, 600V N-CHANNEL POWER MOSFET

文件:408.85 Kbytes Page:9 Pages

UTC

友顺

4A, 600V N-CHANNEL POWER MOSFET

文件:408.85 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL JUNCTIN SILICON FET

文件:262.1 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:250.76 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:432.12 Kbytes Page:9 Pages

UTC

友顺

4A, 600V N-CHANNEL POWER MOSFET

文件:376.13 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:262.04 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:236.59 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL JUNCTIN SILICON FET

文件:262.1 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:262.04 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:236.59 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:250.76 Kbytes Page:8 Pages

UTC

友顺

4A, 600V N-CHANNEL POWER MOSFET

文件:376.13 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:432.12 Kbytes Page:9 Pages

UTC

友顺

4N60产品属性

  • 类型

    描述

  • 型号

    4N60

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

更新时间:2025-8-11 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
22+
TO-252
100000
代理渠道/只做原装/可含税
HN
24+
NA/
19850
原装现货,当天可交货,原型号开票
UTC/友顺
25+
TO-252
51848
百分百原装现货 实单必成 欢迎询价
原装
25+
DFN5x6
20300
原装特价4N60-S即刻询购立享优惠#长期有货
SILAN/士兰微
22+
TO-252-2L;TO-251J-3L
150000
挂的就有,常备现货
UTC
24+
TO-220F
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
UMW(广东友台半导体)
24+
TO-252
5000
诚信服务,绝对原装原盘。
UTC/友顺
1926+
TO-252
6852
只做原装正品现货!或订货假一赔十!
VBsemi
21+
TO220
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
2023+
8700
原装现货

4N60数据表相关新闻