位置：首页 > IC中文资料第5617页 > 4N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
4N60 | 4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 |   | |
4N60 | N-channel power MOS tube Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | |
4N60 | 4 Amps竊?00Volts N-Channel MOSFET 文件：543.79 Kbytes Page：5 Pages | ESTEK 伊泰克电子 | | |
4N60 | 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：397.76 Kbytes Page：8 Pages | UTC 友顺 | | |
4N60 | N-Channel Power MOSFET 文件：987.64 Kbytes Page：7 Pages | ARTSCHIP | | |
4N60 | N-CHANNEL POWER MOSFET 文件：607.6 Kbytes Page：7 Pages | ZSELEC 淄博圣诺电子 | | |
4N60 | 600V N-Channel Power MOSFET 文件：2.51249 Mbytes Page：10 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | | |
4N60 | Avalanche Energy Specified 文件：157 Kbytes Page：2 Pages | ISC 无锡固电 | | |
4N60 | 4A, 600V N-CHANNEL POWER MOSFET 文件：408.85 Kbytes Page：9 Pages | UTC 友顺 | | |
4N60 | N-CHANNEL POWER MOSFET 文件：2.76231 Mbytes Page：9 Pages | SUNMATE 森美特 | | |
4N60 | TO-25 1 Pla s t ic-Encapsulate MOSFET 文件：2.94341 Mbytes Page：3 Pages | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | | |
4N60 | 4A mps,600 Volts N-CHANNEL MOSFET 文件：200.75 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | |
4N60 | N-Channel Power MOSFET 文件：479.31 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | |
4N60 | 4A, 600V N-CHANNEL POWER MOSFET 文件：376.13 Kbytes Page：8 Pages | UTC 友顺 | | |
4N60 | N-Channel 650 V (D-S) MOSFET 文件：1.09859 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
4N60 | N-CHANNEL ENHANCEMENT MODE MOSFET 文件：432.12 Kbytes Page：9 Pages | UTC 友顺 | | |
N-Channel Field Effect Transistor VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
N-Channel Field Effect Transistor VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
N-Channel Field Effect Transistor VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V N-Channel Enhancement Mode MOSFET FEATURES Fast switching 100 avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) | EVVOSEMI 翊欧 | | ||
600V N-Channel Enhancement Mode MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) | EVVOSEMI 翊欧 | | ||
N-channel power MOS tube Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
4.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi | UTC 友顺 | | ||
600V N-Channel Enhancement Mode MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) | EVVOSEMI 翊欧 | | ||
4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
4.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi | UTC 友顺 | | ||
4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
600V N-Channel Enhancement Mode MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) | EVVOSEMI 翊欧 | | ||
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：397.76 Kbytes Page：8 Pages | UTC 友顺 | | ||
4A, 600V N-CHANNEL POWER MOSFET 文件：376.13 Kbytes Page：8 Pages | UTC 友顺 | | ||
4A, 600V N-CHANNEL POWER MOSFET 文件：408.85 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：432.12 Kbytes Page：9 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：167.06 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：162.18 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：175.68 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
4A 600V N-channel enhanced field effect transistor 文件：1.06546 Mbytes Page：7 Pages | YFWDIODE 佑风微电子 | | ||
isc N-Channel MOSFET Transistor 文件：284.18 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：1.07614 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：253.94 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：2.76231 Mbytes Page：9 Pages | SUNMATE 森美特 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：262.1 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：2.76231 Mbytes Page：9 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：2.76231 Mbytes Page：9 Pages | SUNMATE 森美特 | | ||
4A, 600V N-CHANNEL POWER MOSFET 文件：408.85 Kbytes Page：9 Pages | UTC 友顺 | | ||
4A, 600V N-CHANNEL POWER MOSFET 文件：408.85 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：262.1 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：250.76 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：432.12 Kbytes Page：9 Pages | UTC 友顺 | | ||
4A, 600V N-CHANNEL POWER MOSFET 文件：376.13 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：262.04 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：236.59 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：262.1 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：262.04 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：236.59 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：250.76 Kbytes Page：8 Pages | UTC 友顺 | | ||
4A, 600V N-CHANNEL POWER MOSFET 文件：376.13 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：432.12 Kbytes Page：9 Pages | UTC 友顺 | |
4N60产品属性
- 类型
描述
- 型号
4N60
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
24+ |
TO-220F |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
UTC/友顺 |
2023+ |
8700 |
原装现货 |
||||
士兰微 |
21+ |
TO-220 |
425300 |
||||
UTC/友顺 |
1926+ |
TO-252 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
明昕微 |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
中性 |
2024 |
TO-252 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
UTC/友顺 |
21+ |
TO-220 |
6856 |
百域芯优势 实单必成 可开13点增值税 |
|||
KTP |
2020+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
UTC(友顺) |
24+/25+ |
TO-220F1 |
50 |
UTC原厂一级代理商,价格优势! |
|||
UTC |
22+23+ |
TO-251 |
8000 |
新到现货，只做原装进口 |
4N60规格书下载地址
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2018-12-22
DdatasheetPDF页码索引
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