4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

N-channel power MOS tube

Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A

4A, 600V N-CHANNEL POWER MOSFET

4 Amps竊?00Volts N-Channel MOSFET

文件：543.79 Kbytes Page：5 Pages

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：397.76 Kbytes Page：8 Pages

N-Channel Power MOSFET

文件：987.64 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：607.6 Kbytes Page：7 Pages

600V N-Channel Power MOSFET

文件：2.51249 Mbytes Page：10 Pages

Avalanche Energy Specified

文件：157 Kbytes Page：2 Pages

4A, 600V N-CHANNEL POWER MOSFET

文件：408.85 Kbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：2.76231 Mbytes Page：9 Pages

TO-25 1 Pla s t ic-Encapsulate MOSFET

文件：2.94341 Mbytes Page：3 Pages

4A mps,600 Volts N-CHANNEL MOSFET

文件：200.75 Kbytes Page：2 Pages

N-Channel Power MOSFET

文件：479.31 Kbytes Page：10 Pages

4A, 600V N-CHANNEL POWER MOSFET

文件：376.13 Kbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.09859 Mbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：432.12 Kbytes Page：9 Pages

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100 avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

N-channel power MOS tube

Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N60-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N60-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：397.76 Kbytes Page：8 Pages

4A, 600V N-CHANNEL POWER MOSFET

文件：376.13 Kbytes Page：8 Pages

4A, 600V N-CHANNEL POWER MOSFET

文件：408.85 Kbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：432.12 Kbytes Page：9 Pages

N-Channel Field Effect Transistor

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

文件：175.68 Kbytes Page：3 Pages

4A 600V N-channel enhanced field effect transistor

文件：1.06546 Mbytes Page：7 Pages

Planar Mosfet

isc N-Channel MOSFET Transistor

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Power MOSFET

文件：1.07614 Mbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：253.94 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：2.76231 Mbytes Page：9 Pages

N-CHANNEL JUNCTIN SILICON FET

文件：262.1 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：2.76231 Mbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：2.76231 Mbytes Page：9 Pages

4A, 600V N-CHANNEL POWER MOSFET

文件：408.85 Kbytes Page：9 Pages

4A, 600V N-CHANNEL POWER MOSFET

文件：408.85 Kbytes Page：9 Pages

N-CHANNEL JUNCTIN SILICON FET

文件：262.1 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：250.76 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：432.12 Kbytes Page：9 Pages

4A, 600V N-CHANNEL POWER MOSFET

文件：376.13 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：262.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：236.59 Kbytes Page：7 Pages

N-CHANNEL JUNCTIN SILICON FET

文件：262.1 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：262.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：236.59 Kbytes Page：7 Pages