型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel 650 V (D-S)Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

600V N-Channel Power MOSFET

文件:477.85 Kbytes Page:9 Pages

TSC

台湾半导体

600V N-Channel Power MOSFET

文件:369.36 Kbytes Page:11 Pages

TSC

台湾半导体

600V N-Channel Power MOSFET

文件:369.36 Kbytes Page:11 Pages

TSC

台湾半导体

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

4 Amps竊?00Volts N-Channel MOSFET

文件:543.79 Kbytes Page:5 Pages

ESTEK

伊泰克电子

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:397.76 Kbytes Page:8 Pages

UTC

友顺

N-Channel Power MOSFET

文件:987.64 Kbytes Page:7 Pages

ARTSCHIP

N-CHANNEL POWER MOSFET

文件:607.6 Kbytes Page:7 Pages

ZSELEC

淄博圣诺

TSM4N60CH产品属性

  • 类型

    描述

  • 型号

    TSM4N60CH

  • 功能描述

    MOSFET 600V N-Ch MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-21 10:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TAIWANSEM
11+PBF
TO-251
7500
现货
TSC
23+
TO-251
56327
原厂原装正品
TSC/台湾半导体
13+
TO-251
2545
只做原装正品
taiwansemi
TO-220
22+
6000
十年配单,只做原装
NK/南科功率
2025+
TO-252
986966
国产
TSC/台半
2223+
TO-252
26800
只做原装正品假一赔十为客户做到零风险
TSC/台半
2023+
TO-252
7500
专注全新正品,优势现货供应
TAIWAN SEMICONDUCTOR
23+
TO251
50000
全新原装正品现货,支持订货
TAIWANSEM
24+
TO-251
35200
一级代理/放心采购
SLGO
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

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