位置：首页 > IC中文资料第8406页 > TSM4944DCS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TSM4944DCS | N-Channel MOSFET uses advanced trench technology 文件：1.43682 Mbytes Page：4 Pages | DOINGTER 杜因特 |   | |
30V Dual N-Channel MOSFET 文件：258.75 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
30V Dual N-Channel MOSFET 文件：87.99 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual N-Channel Enhancement Mode Field Effect Transistor General Description SRFET TM The AO4944 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low and high side switch in SMPS and general purpose applications. Standard product AO4944 | AOSMD 万国半导体 | | ||
Drywall Punch 文件：1.8415 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SAW Components Low-Loss Filter for Mobile Communication 181,80 MHz 文件：96.12 Kbytes Page：4 Pages | EPCOS 爱普科斯 | | ||
Standard CMOS Voltage Detector IC 文件：269.09 Kbytes Page：10 Pages | ROHM 罗姆 | | ||
Standard CMOS Voltage Detector IC 文件：269.09 Kbytes Page：10 Pages | ROHM 罗姆 | |
TSM4944DCS产品属性
- 类型
描述
- 型号
TSM4944DCS
- 功能描述
MOSFET Dual 30V N channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
SOP-8 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
SOP-8 |
16900 |
原装，请咨询 |
|||
TAIWAN SEMICONDUCTOR |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
|||
TOSHIBA |
22+ |
SOP-8 |
3000 |
原装正品,支持实单 |
|||
TaiwanSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
NK/南科功率 |
2025+ |
SOP-8 |
986966 |
国产 |
|||
TSC/台湾半导体 |
新年份 |
SOP-8 |
16665 |
原装正品现货,实单带TP来谈! |
|||
TSC |
20+ |
SOP-8 |
32550 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
24+ |
SOP-8 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
TSC/台湾半导体 |
24+ |
NA/ |
3361 |
原装现货,当天可交货,原型号开票 |
TSM4944DCS规格书下载地址
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