Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM The AO4944 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low and high side switch in SMPS and general purpose applications. Standard product AO4944

Dual N-Channel Enhancement Mode Field Effect Transistor

1.0 AMP. FAST RECOVERY RECTIFIERS

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Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 200 to 1000 Volts CURRENT - 1.0 Ampere)

FEATURES ● High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● 1.0 ampere operation at TA=55 ¢J with no thermal runaway ● Fast switching for high efficiency ● Exceeds environ

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

VOLTAGE - 200 to 1000 Volts CURRENT - 1.0 Amperes

Dual N-Channel 30-V (D-S) MOSFET

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