位置：首页 > IC中文资料第3747页 > TSM3N80CI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TSM3N80CI | 800V, 3A, Single N-Channel Power MOSFET | TSC 台湾半导体 |   | |
Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
800V N-Channel Power MOSFET 文件：526.66 Kbytes Page：12 Pages | TSC 台湾半导体 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel Power MOSFET 文件：398.32 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | | ||
Fast Switching 文件：49.87 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | |
TSM3N80CI产品属性
- 类型
描述
- 型号
TSM3N80CI
- 功能描述
MOSFET 800V 3A N Channel Power Mosfet
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC/台湾半导体 |
24+ |
NA/ |
5163 |
原厂直销,现货供应,账期支持! |
|||
TSC America Inc. |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
|||
TSC/台湾半导体 |
24+ |
TO-252 |
60000 |
||||
TSC/台湾半导体 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
TSC/台湾半导体 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
TSC |
22+ |
TO-252 |
20000 |
公司只做原装 品质保证 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
TSC |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
TSC/台湾半导体 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
TSC |
18+ |
TO-252 |
1913 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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TSM3N80CI规格书下载地址
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