Advanced planar process

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1000V, 2.5A, Single N-Channel Power MOSFET

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a

TMOS POWER FET 3.0 AMPERES 1000 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination s

NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

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isc N-Channel MOSFET Transistor

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TO220 PACKAGE MARKING DESCRIPTION

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