| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a | MOTOROLA 摩托罗拉 | ||
3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination s | MOTOROLA 摩托罗拉 | ||
3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM | ETC 知名厂家 | ETC | |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination s | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a | MOTOROLA 摩托罗拉 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POW | STMICROELECTRONICS 意法半导体 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POW | STMICROELECTRONICS 意法半导体 |
3N100E规格书下载地址
3N100E参数引脚图相关
- 555电路
- 555
- 54286
- 5386
- 5369
- 51单片机
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3N128
- 3N123
- 3N121
- 3N120
- 3N119
- 3N118
- 3N117
- 3N116
- 3N115
- 3N114
- 3N111
- 3N110
- 3N10L26
- 3N108
- 3N107
- 3N106
- 3N105
- 3N104-D000-S08BF
- 3N104-A000-S08BF
- 3N104
- 3N103
- 3N102
- 3N1012
- 3N101
- 3N100
- 3N06L20
- 3N06L08
- 3N06L06
- 3N0624
- 3N0607
- 3N0605
- 3N04H4
- 3N0406
- 3N0404
- 3N0403
- 3N0266801
- 3N0266701
- 3N0266601
- 3N0266501
- 3N0266401
- 3N0266301
- 3N0266201
- 3N0266101
- 3N0266001
- 3MV1_11
- 3MN03S
- 3M9913
- 3L-U8E
- 3LR12
- 3LP04SS
- 3LP04S
- 3LP04MH
- 3LP04CH
3N100E数据表相关新闻
3LD3054-0TK51
3LD3054-0TK51
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TE Connectivity (TE) 的 Corcom 电源接入模块适用于 I 类或 II 类医疗设备
2023-3-33peak全新原装特价销售TP1562A
3peak全新原装特价销售TP1562A
2022-10-273peak全新原装特价销售TP1564A
3peak全新原装特价销售TP1564A
2022-10-273peak全新原装特价销售TPF140
3peak全新原装特价销售TPF140
2022-10-273MM绿发普绿短脚 LED
国产 现货100K
2022-7-5
DdatasheetPDF页码索引
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