TSM3价格

参考价格:¥316.0177

型号:TSM321 品牌:Ssac 备注:这里有TSM3多少钱,2026年最近7天走势,今日出价,今日竞价,TSM3批发/采购报价,TSM3行情走势销售排行榜,TSM3报价。
型号 功能描述 生产厂家 企业 LOGO 操作

ULTRA MINIATURE SMD CMOS OSCILLATOR (3.2 x 2.5 x 1.2mm)

FEATURES: • LOW COST SMALL SMD PACKAGE • LOW VOLTAGE/LOW CURRENT • AEC-Q200 QUALIFIED OPTION

TRANSKO

Hardware Manual

1.1 Features • Programmable, digital servo driver and motor in an integrated package • Operates from a 24 to 70 volt DC power supply, auxiliary power for keep alive function from 12 to 48 volt DC • Control modes: Torque control Analog input SCL commanded Velocity control Digital input cont

AMP

Hardware Manual

1.1 Features • Programmable, digital servo driver and motor in an integrated package • Operates from a 24 to 70 volt DC power supply, auxiliary power for keep alive function from 12 to 48 volt DC • Control modes: Torque control Analog input SCL commanded Velocity control Digital input cont

AMP

Hardware Manual

1.1 Features • Programmable, digital servo driver and motor in an integrated package • Operates from a 24 to 70 volt DC power supply, auxiliary power for keep alive function from 12 to 48 volt DC • Control modes: Torque control Analog input SCL commanded Velocity control Digital input cont

AMP

Hardware Manual

1.1 Features • Programmable, digital servo driver and motor in an integrated package • Operates from a 24 to 70 volt DC power supply, auxiliary power for keep alive function from 12 to 48 volt DC • Control modes: Torque control Analog input SCL commanded Velocity control Digital input cont

AMP

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

VBSEMI

微碧半导体

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 55 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

TI

德州仪器

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

TI

德州仪器

TSM36A-Q1 Automotive Surge Protection Device in SOT-23 Package

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 41A (8/20μs) – Clamping voltage: 50V at 25A (8/20μs) • Low leakage current: 1μA (maximum) • Temperature range: -55°C to +150°C • AEC-Q101 qualified

TI

德州仪器

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

TI

德州仪器

丝印代码:2O98;TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

TI

德州仪器

TSM36A-Q1 Automotive Surge Protection Device in SOT-23 Package

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 41A (8/20μs) – Clamping voltage: 50V at 25A (8/20μs) • Low leakage current: 1μA (maximum) • Temperature range: -55°C to +150°C • AEC-Q101 qualified

TI

德州仪器

TSM36A-Q1 Automotive Surge Protection Device in SOT-23 Package

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 41A (8/20μs) – Clamping voltage: 50V at 25A (8/20μs) • Low leakage current: 1μA (maximum) • Temperature range: -55°C to +150°C • AEC-Q101 qualified

TI

德州仪器

TSM36CA-Q1 Automotive Bidirectional Surge Protection Device in SOT-23

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current: 100nA (maximum) • Temperature range: -55

TI

德州仪器

TSM36CA-Q1 Automotive Bidirectional Surge Protection Device in SOT-23

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current: 100nA (maximum) • Temperature range: -55

TI

德州仪器

TSM36CA Bidirectional Surge Protection Device in SOT-23

1 Features • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current of 100nA (maximum) • Industrial temperature range:

TI

德州仪器

丝印代码:3IIG;TSM36CA Bidirectional Surge Protection Device in SOT-23

1 Features • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current of 100nA (maximum) • Industrial temperature range:

TI

德州仪器

TSM36CA-Q1 Automotive Bidirectional Surge Protection Device in SOT-23

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current: 100nA (maximum) • Temperature range: -55

TI

德州仪器

TSM36CA-Q1 Automotive Bidirectional Surge Protection Device in SOT-23

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current: 100nA (maximum) • Temperature range: -55

TI

德州仪器

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

N-Channel Power MOSFET 60V, 27A, 30m廓

文件:384.17 Kbytes Page:6 Pages

TSC

台湾半导体

60V, 25A, Dual N-Channel Power MOSFET

TSC

台湾半导体

60V, 24A, Single N-Channel Power MOSFET

TSC

台湾半导体

60V, 24A, Dual N-Channel Power MOSFET

TSC

台湾半导体

20V P-Channel MOSFET with Schottky Diode

文件:414.31 Kbytes Page:7 Pages

TSC

台湾半导体

20V P-Channel MOSFET with Schottky Diode

文件:455.26 Kbytes Page:7 Pages

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台湾半导体

20V P-Channel MOSFET with Schottky Diode

文件:455.26 Kbytes Page:7 Pages

TSC

台湾半导体

20V P-Channel MOSFET with Schottky Diode

文件:414.31 Kbytes Page:7 Pages

TSC

台湾半导体

30V N-Channel Power MOSFET

文件:310.23 Kbytes Page:5 Pages

TSC

台湾半导体

30V N-Channel Power MOSFET

文件:310.23 Kbytes Page:5 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:247.78 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:247.78 Kbytes Page:6 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:349.9 Kbytes Page:6 Pages

TSC

台湾半导体

-30V P-Channel Enhancement Mode MOSFET

文件:217.52 Kbytes Page:5 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:349.9 Kbytes Page:6 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:240.95 Kbytes Page:6 Pages

TSC

台湾半导体

P-Channel Power MOSFET

文件:261.76 Kbytes Page:7 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:349.9 Kbytes Page:6 Pages

TSC

台湾半导体

-30V P-Channel Enhancement Mode MOSFET

文件:217.52 Kbytes Page:5 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:240.95 Kbytes Page:6 Pages

TSC

台湾半导体

P-Channel Power MOSFET

文件:261.76 Kbytes Page:7 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:346.68 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:346.68 Kbytes Page:6 Pages

TSC

台湾半导体

MICRO SURFACE MOUNT SCHOTTKY BRIDGE

文件:151.31 Kbytes Page:5 Pages

PANJIT

強茂

封装/外壳:4-SMD,鸥翼 包装:散装 描述:MICRO SURFACE MOUNT SCHOTTKY BRI 分立半导体产品 二极管 - 桥式整流器

ETC

知名厂家

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:348.79 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:127.41 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:211.58 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:127.41 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:211.58 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:348.79 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:211.58 Kbytes Page:6 Pages

TSC

台湾半导体

20V P-Channel MOSFET

文件:379.03 Kbytes Page:6 Pages

TSC

台湾半导体

20V P-Channel MOSFET

文件:121.91 Kbytes Page:6 Pages

TSC

台湾半导体

20V P-Channel MOSFET

文件:121.91 Kbytes Page:6 Pages

TSC

台湾半导体

TSM3产品属性

  • 类型

    描述

  • 型号

    TSM3

  • 功能描述

    Analog IC

更新时间:2026-3-16 19:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TSC
20+
DFN56
32550
原装优势主营型号-可开原型号增税票
TSC
19+
PDFN56
200000
TOSHIBA
22+
TO-252
3000
原装正品,支持实单
TSC
24+
TO-252
5000
全新原装正品,现货销售
TSC
22+
TO-252
20000
公司只做原装 品质保证
TSC
24+
PDFN56
99200
原装现货假一赔十
TSC
DFN56
68552
一级代理 原装正品假一罚十价格优势长期供货
TSC/台湾半导体
25+
TO-252
1140
全新原装正品支持含税
TSC/台湾半导体
20+
TO-252
32500
现货很近!原厂很远!只做原装
TSC/台半
2447
TO-252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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