TSM3价格

参考价格:¥316.0177

型号:TSM321 品牌:Ssac 备注:这里有TSM3多少钱,2026年最近7天走势,今日出价,今日竞价,TSM3批发/采购报价,TSM3行情走势销售排行榜,TSM3报价。
型号 功能描述 生产厂家 企业 LOGO 操作

ULTRA MINIATURE SMD CMOS OSCILLATOR (3.2 x 2.5 x 1.2mm)

FEATURES: • LOW COST SMALL SMD PACKAGE • LOW VOLTAGE/LOW CURRENT • AEC-Q200 QUALIFIED OPTION

TRANSKO

Hardware Manual

1.1 Features • Programmable, digital servo driver and motor in an integrated package • Operates from a 24 to 70 volt DC power supply, auxiliary power for keep alive function from 12 to 48 volt DC • Control modes: Torque control Analog input SCL commanded Velocity control Digital input cont

AMP

Hardware Manual

1.1 Features • Programmable, digital servo driver and motor in an integrated package • Operates from a 24 to 70 volt DC power supply, auxiliary power for keep alive function from 12 to 48 volt DC • Control modes: Torque control Analog input SCL commanded Velocity control Digital input cont

AMP

Hardware Manual

1.1 Features • Programmable, digital servo driver and motor in an integrated package • Operates from a 24 to 70 volt DC power supply, auxiliary power for keep alive function from 12 to 48 volt DC • Control modes: Torque control Analog input SCL commanded Velocity control Digital input cont

AMP

Hardware Manual

1.1 Features • Programmable, digital servo driver and motor in an integrated package • Operates from a 24 to 70 volt DC power supply, auxiliary power for keep alive function from 12 to 48 volt DC • Control modes: Torque control Analog input SCL commanded Velocity control Digital input cont

AMP

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

VBSEMI

微碧半导体

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

TI

德州仪器

TSM36A-Q1 Automotive Surge Protection Device in SOT-23 Package

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 41A (8/20μs) – Clamping voltage: 50V at 25A (8/20μs) • Low leakage current: 1μA (maximum) • Temperature range: -55°C to +150°C • AEC-Q101 qualified

TI

德州仪器

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 55 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

TI

德州仪器

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

TI

德州仪器

TSM36A Surge Protection Device in SOT-23 Package

1 Features • Undirectional surge protection against 1.7 kV, 42 Ω IEC 61000-4-5 surge test for industrial signal lines • Robust surge protection: – IEC61000-4-5 (8/20 μs): 41 A • Low clamping voltage of 50 V at 25 A for 8/20 μs surge current protects downstream components • 36 V working volt

TI

德州仪器

TSM36A-Q1 Automotive Surge Protection Device in SOT-23 Package

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 41A (8/20μs) – Clamping voltage: 50V at 25A (8/20μs) • Low leakage current: 1μA (maximum) • Temperature range: -55°C to +150°C • AEC-Q101 qualified

TI

德州仪器

TSM36A-Q1 Automotive Surge Protection Device in SOT-23 Package

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 41A (8/20μs) – Clamping voltage: 50V at 25A (8/20μs) • Low leakage current: 1μA (maximum) • Temperature range: -55°C to +150°C • AEC-Q101 qualified

TI

德州仪器

TSM36CA-Q1 Automotive Bidirectional Surge Protection Device in SOT-23

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current: 100nA (maximum) • Temperature range: -55

TI

德州仪器

TSM36CA Bidirectional Surge Protection Device in SOT-23

1 Features • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current of 100nA (maximum) • Industrial temperature range:

TI

德州仪器

TSM36CA-Q1 Automotive Bidirectional Surge Protection Device in SOT-23

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current: 100nA (maximum) • Temperature range: -55

TI

德州仪器

TSM36CA Bidirectional Surge Protection Device in SOT-23

1 Features • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current of 100nA (maximum) • Industrial temperature range:

TI

德州仪器

TSM36CA-Q1 Automotive Bidirectional Surge Protection Device in SOT-23

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current: 100nA (maximum) • Temperature range: -55

TI

德州仪器

TSM36CA-Q1 Automotive Bidirectional Surge Protection Device in SOT-23

1 Features • ISO 10605 (330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC61000-4-5 surge protection: – 20A (8/20μs) – Clamping voltage: 55V at 20A (8/20μs) • IO capacitance: 15pF (typical) • Low leakage current: 100nA (maximum) • Temperature range: -55

TI

德州仪器

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

N-Channel Power MOSFET 60V, 27A, 30m廓

文件:384.17 Kbytes Page:6 Pages

TSC

台湾半导体

60V, 25A, Dual N-Channel Power MOSFET

TSC

台湾半导体

60V, 24A, Single N-Channel Power MOSFET

TSC

台湾半导体

60V, 24A, Dual N-Channel Power MOSFET

TSC

台湾半导体

20V P-Channel MOSFET with Schottky Diode

文件:414.31 Kbytes Page:7 Pages

TSC

台湾半导体

20V P-Channel MOSFET with Schottky Diode

文件:455.26 Kbytes Page:7 Pages

TSC

台湾半导体

20V P-Channel MOSFET with Schottky Diode

文件:455.26 Kbytes Page:7 Pages

TSC

台湾半导体

20V P-Channel MOSFET with Schottky Diode

文件:414.31 Kbytes Page:7 Pages

TSC

台湾半导体

30V N-Channel Power MOSFET

文件:310.23 Kbytes Page:5 Pages

TSC

台湾半导体

30V N-Channel Power MOSFET

文件:310.23 Kbytes Page:5 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:247.78 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:247.78 Kbytes Page:6 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:349.9 Kbytes Page:6 Pages

TSC

台湾半导体

-30V P-Channel Enhancement Mode MOSFET

文件:217.52 Kbytes Page:5 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:349.9 Kbytes Page:6 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:240.95 Kbytes Page:6 Pages

TSC

台湾半导体

P-Channel Power MOSFET

文件:261.76 Kbytes Page:7 Pages

TSC

台湾半导体

-30V P-Channel Enhancement Mode MOSFET

文件:217.52 Kbytes Page:5 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:349.9 Kbytes Page:6 Pages

TSC

台湾半导体

30V P-Channel MOSFET

文件:240.95 Kbytes Page:6 Pages

TSC

台湾半导体

P-Channel Power MOSFET

文件:261.76 Kbytes Page:7 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:346.68 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:346.68 Kbytes Page:6 Pages

TSC

台湾半导体

MICRO SURFACE MOUNT SCHOTTKY BRIDGE

文件:151.31 Kbytes Page:5 Pages

PANJIT

強茂

封装/外壳:4-SMD,鸥翼 包装:散装 描述:MICRO SURFACE MOUNT SCHOTTKY BRI 分立半导体产品 二极管 - 桥式整流器

ETC

知名厂家

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

60V N-Channel Power MOSFET

文件:924.63 Kbytes Page:9 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:348.79 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:127.41 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:211.58 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:348.79 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:211.58 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:127.41 Kbytes Page:6 Pages

TSC

台湾半导体

30V N-Channel MOSFET

文件:211.58 Kbytes Page:6 Pages

TSC

台湾半导体

20V P-Channel MOSFET

文件:379.03 Kbytes Page:6 Pages

TSC

台湾半导体

20V P-Channel MOSFET

文件:121.91 Kbytes Page:6 Pages

TSC

台湾半导体

20V P-Channel MOSFET

文件:379.03 Kbytes Page:6 Pages

TSC

台湾半导体

TSM3产品属性

  • 类型

    描述

  • 型号

    TSM3

  • 功能描述

    Analog IC

更新时间:2026-1-27 19:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TSC/台湾半导体
23+
SOT-23
50000
原装正品 支持实单
TSC台半
24+
SOT-23
18000
原装正品 有挂有货 假一赔十
NK/南科功率
2025+
SOT-23
986966
国产
TI
20+
QFP-100
500
样品可出,优势库存欢迎实单
TSC America Inc.
22+
TO2363 SC59 SOT233
9000
原厂渠道,现货配单
TSC/台湾半导体
24+
SOT-23
9600
原装现货,优势供应,支持实单!
原厂
22+
N/A
20000
只做原装
TSC台半
25+
SOT-23
28496
TSC台半
20+
SOT-23
9223
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
24+
QFP32
33200
原装正品价格优势!欢迎询价QQ:385913858TEL:15

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