位置:首页 > IC中文资料 > TSM2NB60CPROG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TSM2NB60CPROG | 600V N-Channel Power MOSFET 文件:376.66 Kbytes Page:10 Pages | TSC 台湾半导体 | ||
TSM2NB60CPROG | 600V N-Channel Power MOSFET 文件:378.11 Kbytes Page:10 Pages | TSC 台湾半导体 | ||
TSM2NB60CPROG | N-Channel 650 V (D-S) MOSFET 文件:1.08799 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | ||
600V N-Channel Power MOSFET 文件:378.11 Kbytes Page:10 Pages | TSC 台湾半导体 | |||
600V N-Channel Power MOSFET 文件:376.66 Kbytes Page:10 Pages | TSC 台湾半导体 | |||
Pb-free plating 文件:840.16 Kbytes Page:9 Pages | TSC 台湾半导体 | |||
N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |||
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MINI |
24+ |
30 |
|||||
Mini-Circuits |
2023+ |
A11 |
300 |
专业销售MINI电子元件,常年备有大量库存 |
|||
TAIWAN SEMICONDUCTOR |
2450+ |
TO-252 |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
|||
TSC America Inc. |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
原厂 |
原厂封装 |
1521 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MINI |
三年内 |
1983 |
只做原装正品 |
||||
TSC/台湾半导体 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
Mini-Circuits |
638 |
原装正品 |
|||||
MINI |
24+ |
SMD |
5500 |
MINI“芯达集团”专营品牌原装正品假一罚十 |
|||
MINI |
23+ |
N/A |
10000 |
原装现货 假一赔十 |
TSM2NB60CPROG芯片相关品牌
TSM2NB60CPROG规格书下载地址
TSM2NB60CPROG参数引脚图相关
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DdatasheetPDF页码索引
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