位置：首页 > IC中文资料第1864页 > TSM25N03CP
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
25V N-Channel MOSFET 文件：357.7 Kbytes Page：6 Pages | TSC 台湾半导体 |   | ||
25V N-Channel MOSFET 文件：132.19 Kbytes Page：6 Pages | TSC 台湾半导体 | | ||
25V N-Channel MOSFET | TSC 台湾半导体 | | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM25N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l | ADV 爱德微 | | ||
30V N-Channel Enhancement Mode MOSFET Features RDS(ON), VGS@10V,ID@12A | PANJIT 強茂 | | ||
N-Channel Power MOSFET 文件：2.01458 Mbytes Page：5 Pages | JIANGSU 长电科技 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：589.74 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
High density cell design for ultra low Rdson 文件：553.72 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | |
TSM25N03CP产品属性
- 类型
描述
- 型号
TSM25N03CP
- 功能描述
MOSFET 25V N channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC/台湾半导体 |
24+ |
SOT-26 |
60000 |
||||
TSC/台湾半导体 |
24+ |
SOT-26 |
9600 |
原装现货,优势供应,支持实单! |
|||
TSC/台湾半导体 |
23+ |
SOT-26 |
50000 |
原装正品 支持实单 |
|||
TSC |
24+ |
SOT-26 |
99500 |
原装现货假一赔十 |
|||
TSC |
19+ |
SOT-26 |
200000 |
||||
TSC/台湾半导体 |
新年份 |
TO-252 |
33288 |
原装正品现货,实单带TP来谈! |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TSC/台湾半导体 |
21+ |
SOT-26 |
880000 |
明嘉莱只做原装正品现货 |
|||
TSC/台湾半导体 |
23+ |
SOT-26 |
50000 |
全新原装正品现货,支持订货 |
|||
TOSHIBA |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
TSM25N03CP芯片相关品牌
TSM25N03CP规格书下载地址
TSM25N03CP参数引脚图相关
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2019-9-29
DdatasheetPDF页码索引
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