LIGHT-TO-VOLTAGE OPTICAL SENSOR

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PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER

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PRECISION HIGH\u0006SPEED LIGHT\u0006TO\u0006VOLTAGE CONVERTER

LIGHT-TO-VOLTAGE OPTICAL SENSOR

Description The TSL253R is a light-to-voltage optical sensor combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. The device has improved amplifie

LIGHT-TO-VOLTAGE OPTICAL SENSOR

Description The TSL253R is a light-to-voltage optical sensor combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. The device has improved amplifie

LIGHT-TO-VOLTAGE OPTICAL SENSOR

Description The TSL253R is a light-to-voltage optical sensor combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. The device has improved amplifie

LIGHT-TO-VOLTAGE OPTICAL SENSOR

文件：596.72 Kbytes Page：11 Pages

LIGHT-TO-VOLTAGE OPTICAL SENSOR

封装/外壳：径向 - 3 引线 包装：卷带（TR） 描述：SENSOR OPT 635NM AMB RADIAL 3PIN 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

封装/外壳：3-SMD，侧视图 包装：卷带（TR） 描述：SENSOR OPT 635NM AMBIENT SMD 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)