| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:TSC2012;High voltage, precision, bidirectional current sense amplifiers Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m | STMICROELECTRONICS 意法半导体 | |||
丝印代码:TSC2012;High voltage, precision, bidirectional current sense amplifiers 文件:1.86858 Mbytes Page:54 Pages | STMICROELECTRONICS 意法半导体 | |||
TSC2012 | High voltage, precision, bidirectional current sense amplifiers Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m | STMICROELECTRONICS 意法半导体 | ||
TSC2012 | 高压精密双向电流感应放大器 The TSC2010, TSC2011 and TSC2012 are precision bidirectional current sense amplifiers. They can sense the current thanks to a shunt resistor over a wide range of common mode voltages, from - 20 to + 70 V, whatever the supply voltage is. They are available with an amplifier gain of 20V/V for TSC2010, • Wide common mode voltage: - 20 to 70 V \n• Offset voltage: ± 200 µV max \n• 2.7 to 5.5 V supply voltage \n• Different gain available \n •TSC2010: 20 V/V \n •TSC2011: 60 V/V \n •TSC2012: 100 V/V \n• Gain error: 0.3% max \n• Offset drift: 5 µV/°C max \n• Quiescent current: 20 µA in shutdown mode; | STMICROELECTRONICS 意法半导体 | ||
TSC2012 | High voltage, precision, bidirectional current sense amplifiers 文件:1.86858 Mbytes Page:54 Pages | STMICROELECTRONICS 意法半导体 | ||
丝印代码:TSC2012Y;High voltage, precision, bidirectional current sense amplifiers Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m | STMICROELECTRONICS 意法半导体 | |||
丝印代码:TSC2012Y;High voltage, precision, bidirectional current sense amplifiers 文件:1.86858 Mbytes Page:54 Pages | STMICROELECTRONICS 意法半导体 | |||
High temperature, high voltage, precision, bidirectional current sense amplifiers Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3% max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shut | STMICROELECTRONICS 意法半导体 | |||
High voltage, precision, bidirectional current sense amplifier The TSC2010H, TSC2011H and TSC2012H are precision bidirectional current sense amplifiers. They can sense the current thanks to a shunt resistor over a wide range of common mode voltages, from - 20 to + 70 V, whatever the supply voltage is. They are available with an amplifier gain of 20V/V for TSC20 • Wide common mode voltage: - 20 to 70 V \n• Offset voltage: ± 200 µV max \n• 2.7 to 5.5 V supply voltage \n• Different gain available \n •TSC2010H: 20 V/V \n •TSC2011H: 60 V/V \n •TSC2012H: 100 V/V \n• Gain error: 0.3% max \n• Offset drift: 5 µV/°C max \n• Quiescent current: 20 µA in shutdown m; | STMICROELECTRONICS 意法半导体 | |||
High temperature, high voltage, precision, bidirectional current sense amplifiers Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3 max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shutdown | STMICROELECTRONICS 意法半导体 | |||
丝印代码:2012HY;High temperature, high voltage, precision, bidirectional current sense amplifiers Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3% max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shut | STMICROELECTRONICS 意法半导体 | |||
丝印代码:O119;High voltage, precision, bidirectional current sense amplifiers Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m | STMICROELECTRONICS 意法半导体 | |||
丝印代码:O122;High voltage, precision, bidirectional current sense amplifiers Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m | STMICROELECTRONICS 意法半导体 | |||
丝印代码:O119;High voltage, precision, bidirectional current sense amplifiers 文件:1.86858 Mbytes Page:54 Pages | STMICROELECTRONICS 意法半导体 | |||
丝印代码:O122;High voltage, precision, bidirectional current sense amplifiers 文件:1.86858 Mbytes Page:54 Pages | STMICROELECTRONICS 意法半导体 | |||
NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL | STMICROELECTRONICS 意法半导体 | |||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim | POLYFET | |||
Integrated Circuit 7-Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie | NTE | |||
SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip | TECCOR | |||
SCR FOR OVERVOLTAGE PROTECTION DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT | STMICROELECTRONICS 意法半导体 |
TSC2012产品属性
- 类型
描述
- Features:
Independent supply and input common-mode
- Marketing Status:
Active
- Package:
MiniSO-8
- Grade:
Automotive
- Operating Temperature_min(°C):
-40
- Operating Temperature_max(°C):
125
- Supply Current_max:
2300
- Common Mode Input Voltage_min(V):
-20
- Common Mode Input Voltage_max(V):
70
- Supply Voltage_min(V):
2.7
- Supply Voltage_max(V):
5.5
- Voltage Gain(V/V):
100
- Unit Price (US$):
0.9
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
25+ |
SO-8 |
12700 |
买原装认准中赛美 |
|||
STM |
23+ |
SO-8 |
50000 |
原装正品 支持实单 |
|||
STMICROELECTRONICS |
21+ |
NA |
2975 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
ST/意法半导体 |
24+ |
SO-8 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法 |
24+ |
SOP8 |
12800 |
强势渠道订货 7-10天 |
|||
ST/意法半导体 |
25+ |
SO-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
ST(意法) |
2511 |
SOIC-8 |
5904 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
STMICRO |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
STMICRO |
25+ |
N/A |
18746 |
样件支持,可原厂排单订货! |
|||
26+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
TSC2012芯片相关品牌
TSC2012规格书下载地址
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TSC2012数据表相关新闻
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瀚佳科技(深圳)有限公司 专业进口电子元器件代理商
2019-11-24
DdatasheetPDF页码索引
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