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丝印代码:TSC2012;High voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m

STMICROELECTRONICS

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丝印代码:TSC2012;High voltage, precision, bidirectional current sense amplifiers

文件:1.86858 Mbytes Page:54 Pages

STMICROELECTRONICS

意法半导体

TSC2012

High voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m

STMICROELECTRONICS

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TSC2012

高压精密双向电流感应放大器

The TSC2010, TSC2011 and TSC2012 are precision bidirectional current sense amplifiers. They can sense the current thanks to a shunt resistor over a wide range of common mode voltages, from - 20 to + 70 V, whatever the supply voltage is. They are available with an amplifier gain of 20V/V for TSC2010, • Wide common mode voltage: - 20 to 70 V \n• Offset voltage: ± 200 µV max \n• 2.7 to 5.5 V supply voltage \n• Different gain available \n •TSC2010: 20 V/V \n •TSC2011: 60 V/V \n •TSC2012: 100 V/V \n• Gain error: 0.3% max \n• Offset drift: 5 µV/°C max \n• Quiescent current: 20 µA in shutdown mode;

STMICROELECTRONICS

意法半导体

TSC2012

High voltage, precision, bidirectional current sense amplifiers

文件:1.86858 Mbytes Page:54 Pages

STMICROELECTRONICS

意法半导体

丝印代码:TSC2012Y;High voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m

STMICROELECTRONICS

意法半导体

丝印代码:TSC2012Y;High voltage, precision, bidirectional current sense amplifiers

文件:1.86858 Mbytes Page:54 Pages

STMICROELECTRONICS

意法半导体

High temperature, high voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3% max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shut

STMICROELECTRONICS

意法半导体

High voltage, precision, bidirectional current sense amplifier

The TSC2010H, TSC2011H and TSC2012H are precision bidirectional current sense amplifiers. They can sense the current thanks to a shunt resistor over a wide range of common mode voltages, from - 20 to + 70 V, whatever the supply voltage is. They are available with an amplifier gain of 20V/V for TSC20 • Wide common mode voltage: - 20 to 70 V \n• Offset voltage: ± 200 µV max \n• 2.7 to 5.5 V supply voltage \n• Different gain available \n •TSC2010H: 20 V/V \n •TSC2011H: 60 V/V \n •TSC2012H: 100 V/V \n• Gain error: 0.3% max \n• Offset drift: 5 µV/°C max \n• Quiescent current: 20 µA in shutdown m;

STMICROELECTRONICS

意法半导体

High temperature, high voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3 max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shutdown

STMICROELECTRONICS

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丝印代码:2012HY;High temperature, high voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3% max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shut

STMICROELECTRONICS

意法半导体

丝印代码:O119;High voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m

STMICROELECTRONICS

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丝印代码:O122;High voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m

STMICROELECTRONICS

意法半导体

丝印代码:O119;High voltage, precision, bidirectional current sense amplifiers

文件:1.86858 Mbytes Page:54 Pages

STMICROELECTRONICS

意法半导体

丝印代码:O122;High voltage, precision, bidirectional current sense amplifiers

文件:1.86858 Mbytes Page:54 Pages

STMICROELECTRONICS

意法半导体

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

STMICROELECTRONICS

意法半导体

TSC2012产品属性

  • 类型

    描述

  • Features:

    Independent supply and input common-mode

  • Marketing Status:

    Active

  • Package:

    MiniSO-8

  • Grade:

    Automotive

  • Operating Temperature_min(°C):

    -40

  • Operating Temperature_max(°C):

    125

  • Supply Current_max:

    2300

  • Common Mode Input Voltage_min(V):

    -20

  • Common Mode Input Voltage_max(V):

    70

  • Supply Voltage_min(V):

    2.7

  • Supply Voltage_max(V):

    5.5

  • Voltage Gain(V/V):

    100

  • Unit Price (US$):

    0.9

更新时间:2026-5-25 11:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
25+
SO-8
12700
买原装认准中赛美
STM
23+
SO-8
50000
原装正品 支持实单
STMICROELECTRONICS
21+
NA
2975
只做原装,一定有货,不止网上数量,量多可订货!
ST/意法半导体
24+
SO-8
6000
全新原装深圳仓库现货有单必成
ST/意法
24+
SOP8
12800
强势渠道订货 7-10天
ST/意法半导体
25+
SO-8
30000
原装正品公司现货,假一赔十!
ST(意法)
2511
SOIC-8
5904
电子元器件采购降本30%!原厂直采,砍掉中间差价
STMICRO
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
STMICRO
25+
N/A
18746
样件支持,可原厂排单订货!
26+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择

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