丝印代码：TSC2012；High voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010: 20 V/V – TSC2011: 60 V/V – TSC2012: 100 V/V • Gain error: 0.3% max • Offset drift: 5 μV/°C max • Quiescent current: 20 μA in shutdown m

丝印代码：TSC2012；High voltage, precision, bidirectional current sense amplifiers

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NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

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Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

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