High bandwidth (52 MHz), rail-to-rail output, 36 V op amp

Features • Low offset voltage: 3 mV max @ 25 °C • Low current consumption: 3.3 mA max / op @ 36 V • Wide supply voltage: 4.5 to 36 V • Gain bandwidth product: 52 MHz typ. @ 36 V • Unity gain stable • Rail-to-rail output • Output current: 40 mA typ. @ 36 V • Input common-mode voltage includ

Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

Very high accuracy (20 µV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

The TSB182 is a very high precision dual operational amplifier ensuring a maximum input offset voltage of 20 µV. It can operate over an extended supply voltage range and features rail-to-rail output. It offers an excellent speed/current consumption ratio with 3 MHz gain bandwidth product while consu • Very low offset voltage: 20 µV max. @ 25 °C \n• Rail-to-rail output \n• Wide supply voltage: 4 to 36 V \n• Gain bandwidth product: 3 MHz \n• Slew rate: 2 V/µs \n• Low noise: 24 nV/√Hz \n• EMI hardened \n• High ESD tolerance: 4 kV HBM \n• Extended temperature range: -40 °C to 125 °C \n• AEC-Q100 qu;

丝印代码：TSB182I；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

丝印代码：TSB182IY；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

丝印代码：K238；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

丝印代码：K239；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances