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型号	功能描述	生产厂家企业	LOGO
TPD1E1B04	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04	1-Channel ESD Protection Diode with Low R(DYN) and Low Clamping Voltage 文件：250.85 Kbytes Page：17 Pages	TI 德州仪器	TI
TPD1E1B04	采用 0402 封装、具有 6A 8/20us 浪涌和低钳位的 1pF、±3.6V、±30kV ESD 保护二极管	TI 德州仪器	TI
TPD1E1B04_V01	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYR	1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE Features Ultra low leakage: nA level Operating voltage: 3.3 V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 4A (8/20 μs) RoHS Compliant	LEIDITECH 雷卯电子	LEIDITECH
TPD1E1B04DPYR	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYR	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYR.B	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYR.B	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYRG4	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYRG4.B	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYRG4.B	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYR-TP	1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE Features Ultra low leakage: nA level Operating voltage: 3.3 V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 4A (8/20 μs) RoHS Compliant	LEIDITECH 雷卯电子	LEIDITECH
TPD1E1B04DPYT	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYT	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYT.B	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYT.B	TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage 1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6.3 A (8/20 μs) • IO Capacitance: 1 pF (Typical) • DC Breakdown Voltage: 6.4 V (Typical) • Low Leaka	TI 德州仪器	TI
TPD1E1B04DPYR	1-Channel ESD Protection Diode with Low R(DYN) and Low Clamping Voltage 文件：250.85 Kbytes Page：17 Pages	TI 德州仪器	TI
TPD1E1B04DPYR-TP	Ultra-Low Capacitance 1-Line ESD Protection	TECHPUBLIC 台舟电子	TECHPUBLIC
TPD1E1B04DPYT	1-Channel ESD Protection Diode with Low R(DYN) and Low Clamping Voltage 文件：250.85 Kbytes Page：17 Pages	TI 德州仪器	TI
TPD1E1B04DPYT	封装/外壳：0402（1006 公制）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TVS DIODE 3.6VWM 8.5VC 2X1SON 电路保护 TVS - 二极管	TI 德州仪器	TI
TPD1E1B04EVM	功能：瞬态电压抑制（TVS）包装：散装描述：EVALUATION MODULE 开发板，套件，编程器评估和演示板及套件	TI 德州仪器	TI

TPD1E1B04供应商更多...

更新时间：2025-12-29 19:26:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	TPD1E1B04DPYR	TI/德州仪器	25+	X1SON2	32360	TI/德州仪器全新特价TPD1E1B04DPYR即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	TPD1E1B04DPYR	TI	2430+	X1SON2	8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市润联芯城科技有限公司	TPD1E1B04DPYR	TI/德州仪器	22+	X1SON2	30000	只做原装正品	询价
深圳市凌旭科技有限公司	TPD1E1B04DPYR	TI	21+	2-X1SON	160000	十年信誉,只做原装,有挂就有现货!	询价
深圳市讯顺达科技有限公司	TPD1E1B04DPYR	TI	21+	X1SON-2	30000	全新原装公司现货	询价
深圳市柯尔基电子有限公司	TPD1E1B04DPYR	TI/德州仪器	23+/24+	X1SON2	9865	原盒原标正品现货价格美丽终端BOM表可配单	询价
深圳市富利微电子科技有限公司	TPD1E1B04DPYR	TI/德州仪器	24+	X1SON2	33500	全新进口原装现货,假一罚十	询价
深圳市云美电子科技有限公司	TPD1E1B04DPYT	TI/德州仪器	24+	X1SON	9630	只做全新原装进口现货	询价
芯灿微（深圳）科技有限公司	TPD1E1B04DPYR	TI/德州仪器	22+	X1-SON-2	50000		询价
深圳市高捷芯城科技有限公司	TPD1E1B04DPYT	TI(德州仪器)	24+	2-X1SON	7298	原厂可订货,技术支持,直接渠道。可签保供合同	询价

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