TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ??

Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 13.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 24 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) • Enhancement

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

RS232/422 Low Cap, #24-2pr, FPO, O/A FoilBraid, PVC Jkt, CM, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket

RS232/422 Low Cap, #24-2pr, FPO, O/A FoilBraid, LSZH Jkt, Dca, 100Ω

Product Description 2-Pair, 24 AWG stranded (7x32) TC conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + TC braid shield (65 coverage), 24 AWG stranded TC drain wire, LSZH jacket, Flame resistance IEC 60332-3-24 cat.C

T1/CEPT ISDN PRI Transformers

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Low Capacitance for EIA RS-232 and EIA RS-422 Applications

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