TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

High Efficiency DC／ DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 7.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) • High forward

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch single 60V VDSS 150V)

T1/CEPT Extended Temperature Range SMD Dual Line Interface Module

Units matched to leading transceiver ICs. Meet requirements for T1, E1, CEPT and PRI ISDN over extended temperature range –40 to +85˚C.

PCI Express 16 Reed Relay Output Digital Interface

Features • Compliant with RoHS and WEEE directives • PCI Express X1 compliant • 16 Reed relay outputs (SPST) • Highly reliable 10VA DIP Reed relays • Power (+5V and +12V) and ground provided on DB78 board connector • Includes 72″ cable with DB78 Male connector to DB37 Male connector (Item#

Triple, 1.5 GHz Op Amp

GENERAL DESCRIPTION The AD8003 is a triple ultrahigh speed current feedback amplifier. Using ADI’s proprietary eXtra Fast Complementary Bipolar (XFCB) process, the AD8003 achieves a bandwidth of 1.5 GHz and a slew rate of 4300 V/µs. Additionally, the amplifier provides excellent dc precision with

Its a complete tool kit that fits in your palm.

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Triple, 1.5 GHz Op Amp

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