TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Built-in a schottky barrier diode Low forward voltage: VDSF = −0.6 V (max) • High-speed switching • Small gate charge: QSW = 13.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) =

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch + SBD\nGeneration：U-MOSⅤ-H\nRoHS Compatible Product(s) (#)：Available Drain current ID 44 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 30 V ;

N-Channel 30 V (D-S) MOSFET

文件：1.11174 Mbytes Page：7 Pages

Glass Passivated Ultra Fast Recovery Rectifier

Features ◆ Low forward voltage drop ◆ Fast switching for high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current

Glass Passivated Super Fast Recovery Rectifier

文件：817.34 Kbytes Page：2 Pages

Glass Passivated Super Fast Recovery Rectifier

文件：48.09 Kbytes Page：2 Pages

Glass Passivated Super Fast Recovery Rectifier

文件：48.08 Kbytes Page：2 Pages

Glass Passivated Ultra Fast Recovery Rectifier

文件：851.59 Kbytes Page：2 Pages