Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??

Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 1.8 mΩ (typ.) • High forward transfer admittance: |Yfs| =100 S (typ.) • Low leakage current: IDSS = 10 μA (

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 45 A \nPower Dissipation PD 2.8 W \nDrain-Source voltage VDSS 30 V ;

N-Channel 30 V (D-S) MOSFET

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Quad High Speed Amplifier

PRODUCT DESCRIPTION The AD8026 is a complete low cost, closed loop, voltage feedback, quad amplifier. Precision trimmed resistors set a fixed RF/RG ratio of 5/3 to a typical gain accuracy of 0.02. Manufactured on ADI’s proprietary XFCB high speed bipolar process, which enables the output drivers

Self-excited RCC pseudo-resonance type AC-DC switching power supply control IC

■ Overview The AN8026 is an IC developed for controlling the self-excited switching power supply employing the RCC pseudo-resonance type control method. It is compact, equipped only with the necessary minimum functions. The maximum on-period and the minimum off-period can be set separately by u

2.5GHz low voltage fractional-N dual frequency synthesizer

GENERAL DESCRIPTION The SA8026 BICMOS device integrates programmable dividers, charge pumps and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Low phase noise • Lo

FLASHER CONTROLLER

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FLASHER CONTROLLER

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