TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)

Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs ● Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 14 mΩ (typ.) ● High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| =

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)

8-Bit, 4-Channel Data Acquisition System

GENERAL DESCRIPTION The AD8401 is a complete data acquisition and control system containing ADC, DAC, 4-channel MUX, and internal voltage reference. Built using CBCMOS, this monolithic circuit offers the user a complete system with very high package density and reliability. The converter is

Multipurpose control ASIC for OMNIFET

General Description The ASIC’ s purpose is to drive one OMNIFET n-channel power FET device. (OMNIFET is a trademark of SGS-THOMSON). The OMNIFET’ s integrated protection circuits (current limitation, over temperature protection, ...) are supplied via the OMNIFET’ s gate input. Thus in the OMNIF

Separate Excitation Switching Type with Coil

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Separate Excitation Switching Type with Coil

文件：77.42 Kbytes Page：6 Pages

FUNCTIONAL BRIDGE DRIVER

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