Lithium Ion Secondary Battery Applications

Portable Equipment Applications

Notebook PCs

● Low drain−source ON resistance

: P Channel RDS (ON) = 27 mΩ (typ.)

N Channel RDS (ON) = 14 mΩ (typ.)

● High forward transfer admittance

: P Channel |Yfs| = 7 S (typ.)

N Channel |Yfs| = 8 S (typ.)

● Low leakage current

: P Channel IDSS = −10 µA (VDS = −30 V)

N Channel IDSS = 10 µA (VDS = 30 V)

● Enhancement−mode

: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)

N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA)