MOSFETs Silicon P-Channel MOS (U-MOS)

Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON)= 17 mΩ(typ.) (VGS= -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth= -0.8 to -2.0 V (VDS= -10 V, ID= -0.2 mA) Applications • Lithi

P-Channel MOSFET uses advanced trench technology

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Power MOSFET (P-ch single)

P-Channel 30-V (D-S) MOSFET

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Low-Cost 270 MHz Differential Receiver Amplifiers

GENERAL DESCRIPTION The AD8129/AD8130 are designed as receivers for the transmission of high speed signals over twisted-pair cables to work with the AD8131 or AD8132 drivers. Either can be used for analog or digital video signals and for high speed data transmission. The AD8129/AD8130 are di

Low-Cost 270 MHz Differential Receiver Amplifiers

GENERAL DESCRIPTION The AD8129/AD8130 are designed as receivers for the transmission of high speed signals over twisted-pair cables to work with the AD8131 or AD8132 drivers. Either can be used for analog or digital video signals and for high speed data transmission. The AD8129/AD8130 are di

Dynamic Positioning Transponder (DPT)

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Low Cost 270 MHz Differential Receiver Amplifiers

文件：801.27 Kbytes Page：40 Pages

Low Cost 270 MHz Differential Receiver Amplifiers

文件：801.27 Kbytes Page：40 Pages