Field Effect Transistor Silicon P Channel MOS Type (U-MOS V)

Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON)= 8.0 mΩ(typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS= −10 μA (

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (P-ch single)

Ring and Spade Terminals

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BEAM POWER TUBE

文件：891.09 Kbytes Page：8 Pages

Common Mode Inductors (with Optional Header) Dielectric strength: 1500 Vrms

文件：103.77 Kbytes Page：1 Pages

Snap-acting Momentary Pushbutton Switches

文件：2.08001 Mbytes Page：17 Pages

Limit Alarms (potentiometer adj.) A-UNIT

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