TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 31 S (typ.) • Low leakage current: IDSS = −10 µA (m

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vobs =-30V Ip =-60 A Ros(on)

P-Channel 30 V (D-S) MOSFET

APPLICATIONS • Load Switch • Notebook Adaptor Switch

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：247.82 Kbytes Page：7 Pages

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：247.82 Kbytes Page：7 Pages

RS-232/422 Low Cap, #24-7pr, FPO, O/A FoilBraid, PVC Jkt, CM, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.

Low Capacitance for EIA RS-232 and EIA RS-422 Applications

文件：365.47 Kbytes Page：2 Pages

24 AWG stranded (7x32) TC conductors, Datalene짰 insulation, twisted pairs, overall Beldfoil

文件：30.81 Kbytes Page：3 Pages

Common Mode Inductors (with Optional Header) Dielectric strength: 1500 Vrms

文件：103.77 Kbytes Page：1 Pages

20V P-Channel Power MOSFET

文件：112.81 Kbytes Page：6 Pages