TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)

Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications ● Small footprint due to small and thin package ● Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 9 S (typ.) ● Low leakage current : IDSS = −10 µA (max) (VDS =

2-ch DC/DC Converter IC

■ DESCRIPTION The MB39A104 is a 2-channel DC/DC converter IC using pulse width modulation (PWM), incorporating an overcurrent protection circuit (requiring no current sense resistor). This IC is ideal for down conversion. Operating at high frequency reduces the value of coil. This is ideal for

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

RS232/422 Low Cap, #24-2pr, FPO, O/A FoilBraid, PVC Jkt, CM, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket

RS232/422 Low Cap, #24-2pr, FPO, O/A FoilBraid, LSZH Jkt, Dca, 100Ω

Product Description 2-Pair, 24 AWG stranded (7x32) TC conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + TC braid shield (65 coverage), 24 AWG stranded TC drain wire, LSZH jacket, Flame resistance IEC 60332-3-24 cat.C

Low Capacitance for EIA RS-232 and EIA RS-422 Applications

文件：365.47 Kbytes Page：2 Pages

T1/CEPT ISDN PRI Transformers

文件：84.67 Kbytes Page：1 Pages