Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅥ-H\nRoHS Compatible Product(s) (#)：Available Drain current ID 18 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V ;

Low Drop Type Negative Output .4V Regulator with Reset Pin

■ Overview The AN8060 and the AN8060S are the low drop type regulators having the function of resetting output voltage. With a comparator to sence reduced voltage builting it is suitable for batteries operation. ■ Features • With reset function : bias current at resetting –5µA • Small input-ou

Low Drop Type Negative Output .4V Regulator with Reset Pin

■ Overview The AN8060 and the AN8060S are the low drop type regulators having the function of resetting output voltage. With a comparator to sence reduced voltage builting it is suitable for batteries operation. ■ Features • With reset function : bias current at resetting –5µA • Small input-ou

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 80A, RDS(ON) = 10.0mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 80.0A, RDS(ON) = 10.0mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

Satellite ZERO-IF QPSK down-converter

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