Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅥ-H\nRoHS Compatible Product(s) (#)：Available Drain current ID 18 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V ;

Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??H)

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N-Channel 30-V (D-S) MOSFET

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3-pin Positive Output Low Dropout Voltage Regulator 50mA Type

Overview The AN8000 series is 3-pin low-dropout fixed positive output monolithic voltage regulators. Since thier power consumption can be minimized, they are suitable for battery stabilizing power supply and reference voltage. Thirteen types of output voltage are available ; 2V, 2.5V, 3V, 3.5V (T

3-pin Positive Output Low Dropout Voltage Regulator 50mA Type

Overview The AN8000 series is 3-pin low-dropout fixed positive output monolithic voltage regulators. Since thier power consumption can be minimized, they are suitable for battery stabilizing power supply and reference voltage. Thirteen types of output voltage are available ; 2V, 2.5V, 3V, 3.5V (T

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

Gain Block Amplifier

DESCRIPTION The TriQuint TGA8035 - SCC is a two - stage GaAs monolithic amplifier designed for use as a broadband general-purpose gain block. T wo 300 - µm gate- width FETs provide a 13- dB typical gain and a 5- dB noise figure from 6 to 18- GHz. Typical output power at 1- dB gain compression is