丝印代码：H3B；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Polarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Collector Current IC -2 A \nCollector Current ICP -3.5 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.6 W \nCollector-emitter voltage VCEO -10 V ;

TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE

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High-Speed Switching Applications

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High-Speed Switching Applications

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Amplifier Transistors

Amplifier Transistors Voltage and current are negative for PNP transistors

Amplifier Transistors

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Amplifier Transistors

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Amplifier Transistors

文件：79.14 Kbytes Page：8 Pages

Amplifier Transistors

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