650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H150G4LSGB650V,150mΩGalliumNitride (GaN)FETisanormally-offdeviceusingTransphorm’sGen IVplatform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor

650VSuperGaNGaNFETinPQFN(sourcetab)

Description TheTP65H150G4LSG650V,150mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatented

650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H150G4LSGB650V,150mΩGalliumNitride (GaN)FETisanormally-offdeviceusingTransphorm’sGen IVplatform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor

650VSuperGaN®GaNFETinPQFN(sourcetab)

Features ■GenIVtechnology ■JEDEC-qualifiedGaNtechnology ■DynamicRDS(on)effproductiontested ■Robustdesign,definedby ●Transientover-voltagecapability ●OperationwithE-modeGatedriverswithout needforZenerprotection. ■VerylowQRR ■Reducedcrossoverloss ■RoHScomp

650VSuperGaN®GaNFETinPQFN(sourcetab)

Features ■GenIVtechnology ■JEDEC-qualifiedGaNtechnology ■DynamicRDS(on)effproductiontested ■Robustdesign,definedby ●Transientover-voltagecapability ●OperationwithE-modeGatedriverswithout needforZenerprotection. ■VerylowQRR ■Reducedcrossoverloss ■RoHScomp

N-Channel650-VGaNMOSFET

KeyFeatures: •LowrDS(on)GaNtechnology •Lowthermalimpedance •Fastswitchingspeed