TP0604价格
参考价格：￥4.0072
型号：TP0604N3-G 品牌：Microchip Technology 备注：这里有TP0604多少钱，2026年最近7天走势，今日出价，今日竞价，TP0604批发/采购报价，TP0604行情走势销售排行榜，TP0604报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TP0604 | P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX |   | |
TP0604 | P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | |
TP0604 | MOSFET, P-Channel Enhancement-Mode, -40V, 2.0 Ohm This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (-2.4V max.) \nHigh input impedance \nLow input capacitance (95pF typical) \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage; | MICROCHIP 微芯科技 | | |
TP0604 | P-Channel Enhancement-Mode Vertical DMOS FET 文件：311.77 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | |
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description\nThis low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input im ►Lowthreshold (-2.4V max.)\n►High input impedance\n►Low input capacitance (95pF typical)\n►Fast switching speeds\n►Low on-resistance\n►Free from secondary breakdown\n►Low input and output leakageApplications\n►Logic level interfaces - ideal for TTL and CMOS\n►Solid state relays\n►Battery operated sy; | MICROCHIP 微芯科技 | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology\nThese low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h ❏ Low threshold — -2.4V max.\n❏ High input impedance\n❏ Low input capacitance — 95pF typical\n❏ Fast switching speeds\n❏ Low on resistance\n❏ Free from secondary breakdown\n❏ Low input and output leakage\n❏ Complementary N- and P-channel devicesApplications\n❏ Logic level interfaces – ideal for TTL ; | MICROCHIP 微芯科技 | | ||
P-Channel Enhancement-Mode Vertical DMOS FET 文件：311.77 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log | SUTEX | | ||
SMD Power Inductors 文件：167.94 Kbytes Page：2 Pages | BOURNS 伯恩斯 | |
TP0604产品属性
- 类型
描述
- BVdss min (V)：
-40
- Rds (on) max (Ohms)：
2
- Vgs(th) max (V)：
-2.4
- CISSmax (pF)：
150
- Packages：
3\\TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
25+ |
SOP20 |
15300 |
公司常备大量原装现货,可开13%增票! |
|||
26+ |
N/A |
53000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SUPERTEX |
24+ |
35200 |
一级代理/放心采购 |
||||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6843 |
样件支持,可原厂排单订货! |
|||
SUPERTE |
23+ |
TO92 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TOP |
2025+ |
SOP20 |
3365 |
全新原厂原装产品、公司现货销售 |
|||
SI |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TP0604N3 |
25+ |
133 |
133 |
||||
MICROCHIP/微芯 |
22+ |
TO-92-3 |
12245 |
现货,原厂原装假一罚十! |
TP0604规格书下载地址
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DdatasheetPDF页码索引
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