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TP0604N3价格
参考价格：￥4.0072
型号：TP0604N3-G 品牌：Microchip Technology 备注：这里有TP0604N3多少钱，2026年最近7天走势，今日出价，今日竞价，TP0604N3批发/采购报价，TP0604N3行情走势销售排行榜，TP0604N3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TP0604N3 | P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX |   | |
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description\nThis low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input im ►Lowthreshold (-2.4V max.)\n►High input impedance\n►Low input capacitance (95pF typical)\n►Fast switching speeds\n►Low on-resistance\n►Free from secondary breakdown\n►Low input and output leakageApplications\n►Logic level interfaces - ideal for TTL and CMOS\n►Solid state relays\n►Battery operated sy; | MICROCHIP 微芯科技 | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FET 文件：311.77 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：33.28 Kbytes Page：4 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：732.24 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：647.84 Kbytes Page：5 Pages | SUTEX | |
TP0604N3产品属性
- 类型
描述
- 型号
TP0604N3
- 功能描述
MOSFET 40V 2Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TP0604N3 |
25+ |
133 |
133 |
||||
MICROCHIP(美国微芯) |
2447 |
TO-92-3 |
31500 |
1000个/袋一级代理专营品牌!原装正品,优势现货,长 |
|||
Microchip(微芯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
SUPERTEX |
24+ |
35200 |
一级代理/放心采购 |
||||
Microchip(微芯) |
2511 |
8790 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
26+ |
N/A |
53000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SUPERTEX |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
|||
Microchip |
22+ |
TO2263 TO923 (TO226AA) |
9000 |
原厂渠道,现货配单 |
|||
SI |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6843 |
样件支持,可原厂排单订货! |
TP0604N3规格书下载地址
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