TN0604价格
参考价格:¥5.1399
型号:TN0604N3-G 品牌:Microchip Technology 备注:这里有TN0604多少钱,2026年最近7天走势,今日出价,今日竞价,TN0604批发/采购报价,TN0604行情走势销售排行榜,TN0604报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TN0604 | N-Channel Enhancement-Mode Vertical DMOS FETs Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log | SUTEX | ||
TN0604 | MOSFET, N-Channel Enhancement-Mode, 40V, 0.75 Ohm This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (1.6V max.) \nHigh input impedance \nLow input capacitance (140pF typical) \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage; | MICROCHIP 微芯科技 | ||
TN0604 | N-Channel Enhancement-Mode Vertical DMOS FET 文件:732.24 Kbytes Page:6 Pages | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET General Description\nThis low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imp ►Low threshold — 1.6V max.\n►High input impedance\n►Low input capacitance — 140pF typical\n►Fast switching speeds\n►Low on-resistance\n►Free from secondary breakdown\n►Low input and output leakage\n►Complementary N- and P-channel devicesApplications\n►Logic level interfaces – ideal for TTL and CMOS\; | MICROCHIP 微芯科技 | |||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology\n\nThese low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the □ Low threshold — 1.6V max.\n□ High input impedance\n□ Low input capacitance — 140pF typical\n□ Fast switching speeds\n□ Low on resistance\n□ Free from secondary breakdown\n□ Low input and output leakage\n□ Complementary N- and P-channel devicesApplications\n□ Logic level interfaces – ideal for TTL ; | MICROCHIP 微芯科技 | |||
N-Channel Enhancement-Mode Vertical DMOS FETs Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:732.24 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:647.84 Kbytes Page:5 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件:33.28 Kbytes Page:4 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:732.24 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:647.84 Kbytes Page:5 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:647.84 Kbytes Page:5 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:647.84 Kbytes Page:5 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:647.84 Kbytes Page:5 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:647.84 Kbytes Page:5 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:647.84 Kbytes Page:5 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件:33.28 Kbytes Page:4 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:732.24 Kbytes Page:6 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu | SUTEX | |||
SMD Power Inductors 文件:167.94 Kbytes Page:2 Pages | BOURNS 伯恩斯 |
TN0604产品属性
- 类型
描述
- BVdss min (V):
40
- Rds (on) max (Ohms):
0.75
- CISSmax (pF):
190
- Vgs(th) max (V):
1.6
- Packages:
3\\TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SILICONI/矽睿科技 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
Superte |
23+ |
TO92 |
50000 |
全新原装正品现货,支持订货 |
|||
MICROCHIP/美国微芯 |
24+ |
TO-92(TO-92-3) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
MICROCHIP/微芯 |
24+ |
N/A |
5000 |
原装分货 强势渠道 |
|||
MICROCHIP/美国微芯 |
25+ |
TO-92(TO-92-3) |
12700 |
买原装认准中赛美 |
|||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6843 |
样件支持,可原厂排单订货! |
|||
GSUPERTE |
24+ |
SOP20 |
22055 |
郑重承诺只做原装进口现货 |
|||
MICROCHIP/美国微芯 |
2022+ |
TO-92(TO-92-3) |
7600 |
原厂原装,假一罚十 |
|||
MICROCHIP/美国微芯 |
25 |
TO-92(TO-92-3) |
6000 |
原装正品 |
TN0604规格书下载地址
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