Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Description TOPSwitch-HX cost effectively incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Product Highlights Lower System Cost, Higher Design Flexib

Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads • New eSIP-7F and eSIP-7C packages • Low thermal impedance junction-to-case (2 °C per watt) • Low height is ideal for adapters where space is limited • Simple mounting using a clip to aid low

采用增强的EcoSmart技术的集成离线式开关，具有先进的特性和扩展的功率范围

TOPSwitch-HX在一个单片器件上集成了一个700 V的功率MOSFET、高压开关电流源、PWM控制器、振荡器、热关断电路、故障保护及其他控制电路。 更低的系统成本，更高的设计灵活性\r\n• 多模式工作方式可实现在各种负载下的效率最大化\r\n• 基于PI在高功率和高可靠性封装方面的经验开发的全新eSIP-7C和eSIP-7F封装\r\n• P、G或M封装无需使用散热片最大输出功率可达35 W，230 VAC时最大输出功率达48 W\r\n• 输出过压保护(OVP)可由用户对锁存/非锁存关断功能进行编程，并可快速进行AC重置\r\n• 线电压欠压(UV)检测可以防止关机时的输出脉冲干扰\r\n• 线电压过压(OV)关断电路提高了对输入浪涌的耐受力\r\n• 精确可编程的电流限流\r\n• 优化的线电压前馈，用于抑制线电压纹波\r\n• 1;

Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

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封装/外壳：7-SSIP，6 引线，裸露焊盘，成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC OFFLINE SWITCH FLYBACK 7ESIP 集成电路（IC） AC DC 转换器，离线开关

Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads • New eSIP-7F and eSIP-7C packages • Low thermal impedance junction-to-case (2 °C per watt) • Low height is ideal for adapters where space is limited • Simple mounting using a clip to aid low

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)