丝印代码：TO-263；LM2576xx Series SIMPLE SWITCHER® Power Converter 3-A Step-Down Voltage Regulator

1 Features • Newer products available: – LMR51430 4.5 to 36-V, 3-A, 500-kHz and 1.1- MHz synchronous converter – LM76003 3.5 to 60-V, 3.5-A, 300-kHz to 2.2- MHz synchronous converter • For faster time to market: – TLVM13630 3 to 36-V, 3-A, 200-kHz to 2.2-MHz power module • 3.3-V, 5-V, 12-

丝印代码：TO-263；LM2576xx Series SIMPLE SWITCHER® Power Converter 3-A Step-Down Voltage Regulator

1 Features • Newer products available: – LMR51430 4.5 to 36-V, 3-A, 500-kHz and 1.1- MHz synchronous converter – LM76003 3.5 to 60-V, 3.5-A, 300-kHz to 2.2- MHz synchronous converter • For faster time to market: – TLVM13630 3 to 36-V, 3-A, 200-kHz to 2.2-MHz power module • 3.3-V, 5-V, 12-

丝印代码：TO-263；LM2576xx Series SIMPLE SWITCHER® Power Converter 3-A Step-Down Voltage Regulator

1 Features • Newer products available: – LMR51430 4.5 to 36-V, 3-A, 500-kHz and 1.1- MHz synchronous converter – LM76003 3.5 to 60-V, 3.5-A, 300-kHz to 2.2- MHz synchronous converter • For faster time to market: – TLVM13630 3 to 36-V, 3-A, 200-kHz to 2.2-MHz power module • 3.3-V, 5-V, 12-

丝印代码：TO-263；LM2576xx Series SIMPLE SWITCHER® Power Converter 3-A Step-Down Voltage Regulator

1 Features • Newer products available: – LMR51430 4.5 to 36-V, 3-A, 500-kHz and 1.1- MHz synchronous converter – LM76003 3.5 to 60-V, 3.5-A, 300-kHz to 2.2- MHz synchronous converter • For faster time to market: – TLVM13630 3 to 36-V, 3-A, 200-kHz to 2.2-MHz power module • 3.3-V, 5-V, 12-

丝印代码：TO-263；LM2576xx Series SIMPLE SWITCHER® Power Converter 3-A Step-Down Voltage Regulator

1 Features • Newer products available: – LMR51430 4.5 to 36-V, 3-A, 500-kHz and 1.1- MHz synchronous converter – LM76003 3.5 to 60-V, 3.5-A, 300-kHz to 2.2- MHz synchronous converter • For faster time to market: – TLVM13630 3 to 36-V, 3-A, 200-kHz to 2.2-MHz power module • 3.3-V, 5-V, 12-

丝印代码：TO-263；LM2576xx Series SIMPLE SWITCHER® Power Converter 3-A Step-Down Voltage Regulator

1 Features • Newer products available: – LMR51430 4.5 to 36-V, 3-A, 500-kHz and 1.1- MHz synchronous converter – LM76003 3.5 to 60-V, 3.5-A, 300-kHz to 2.2- MHz synchronous converter • For faster time to market: – TLVM13630 3 to 36-V, 3-A, 200-kHz to 2.2-MHz power module • 3.3-V, 5-V, 12-

丝印代码：TO-263；600V, 7A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

丝印代码：TO-263；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-263；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-263；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-263；600V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-263；1200V, 15A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：TO-263；600V, 15A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：TO-263；600V, 20A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

丝印代码：TO-263；1200V, 25A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：TO-263；1200V, 25A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：TO-263；1200V, 25A, Trench FS II

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：TO-263；N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

丝印代码：TO-263；N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

丝印代码：TO-263；1200V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

丝印代码：TO-263；N-Channel Super Junction Power MOSFET ?

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1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

D2PAK follows the JEDEC standard (TO-263) for high-power discrete products.

FEATURES Low on-resistance and high-current density due to thick Al wirebonding Full turnkey available from wafer saw through test and packing Green materials: Pb-free plating and halogen-free mold compound Applications D2PAK is suitable for high-power applications (over 100A available),

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

Sample Instructions for Choosing a Packing Option

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TO-263 D PAK SMD Plastic Package Package Outline and Packaging Information

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3 Amp Positive Voltage Regulator

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TO-263 D PAK SMD Plastic Package Package Outline and Packaging Information

N-Channel 100-V (D-S) 175 °C MOSFET

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TO-263 BIPOLAR TRANSISTORS

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丝印代码：TO-263-7LXL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • R

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state co • 5.3A, 1200V, TC = 25°C\n• 1200V Switching SOA Capability\n• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150°C\n• Short Circuit Rating\n• Low Conduction Loss\n• Temperature Compensating SABER™ Model\n   Thermal Impedance SPICE Model www.intersil.com/\n• Related Literature\n   - ;

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency invert

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency invert

Metal silicon junction, majority carrier conduction

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo

Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B10

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

Dual Common Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Oxide planar chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur

Guardring for overvoltage protection

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

Sample Instructions for Choosing a Packing Option

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

(D2 PAK) A : MIN 9.65 MAX 10.42 B : MIN 8.28 MAX 9.66

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Carrier Width (W) 24.0-0.1 mm Pitch (P) 4.0-0.1 mm

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Packaging for Automatic Handling

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Plastic-Encapsulate MOSFETS

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Plastic-Encapsulate MOSFETS

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Plastic-Encapsulate MOSFETS

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Plastic-Encapsulate MOSFETS

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Carrier Width (W) 24.0-0.1 mm Pitch (P) 4.0-0.1 mm

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(D2 PAK) A : MIN 9.65 MAX 10.67 B : MIN 8.28 MAX 9.66

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贴片电阻

Packaging for Automatic Handling

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Carrier Width (W) 24.0-0.1 mm Pitch (P) 4.0-0.1 mm

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A : MIN 9.800 MAX 10.668 B : MIN 8.200 MAX 9.169

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5-Lead TO-263 Plastic Surface Mount Package

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Packaging for Automatic Handling

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