您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第5570页 > TO-263

型号 功能描述 生产厂家 企业 LOGO 操作
TO-263

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

HSMC

华昕

TO-263

1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

ZPSEMIZP Semiconductor

至尚臻品

TO-263

1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

ZPSEMIZP Semiconductor

至尚臻品

TO-263

1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

ZPSEMIZP Semiconductor

至尚臻品

TO-263

D2PAK follows the JEDEC standard (TO-263) for high-power discrete products.

FEATURES Low on-resistance and high-current density due to thick Al wirebonding Full turnkey available from wafer saw through test and packing Green materials: Pb-free plating and halogen-free mold compound Applications D2PAK is suitable for high-power applications (over 100A available),

amkor

安靠科技

TO-263

TO-263 D PAK SMD Plastic Package Package Outline and Packaging Information

CDIL

TO-263

N-Channel 100-V (D-S) 175 °C MOSFET

文件：104.42 Kbytes Page：6 Pages

VishayVishay Siliconix

威世威世科技公司

TO-263

TO-263 BIPOLAR TRANSISTORS

文件：53.08 Kbytes Page：1 Pages

FOSHAN

蓝箭电子

TO-263

3 Amp Positive Voltage Regulator

文件：168.69 Kbytes Page：6 Pages

SEMTECH

先之科

TO-263

Sample Instructions for Choosing a Packing Option

文件：306.92 Kbytes Page：8 Pages

Littelfuse

力特

TO-263

TO-263 D PAK SMD Plastic Package Package Outline and Packaging Information

文件：415.47 Kbytes Page：3 Pages

CDIL

TO-263-2

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

AITSEMI

创瑞科技

TO-263AB

Guardring for overvoltage protection

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

TO-263AB

Dual Common Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Oxide planar chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur

VishayVishay Siliconix

威世威世科技公司

TO-263AB

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency invert

KERSEMI

TO-263AB

Metal silicon junction, majority carrier conduction

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo

KERSEMI

TO-263AB

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo

KERSEMI

TO-263AB

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency invert

KERSEMI

TO-263AB

Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B10

VishayVishay Siliconix

威世威世科技公司

TO-263AB

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

VishayVishay Siliconix

威世威世科技公司

TO-263AB

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

KERSEMI

TO-263D

Sample Instructions for Choosing a Packing Option

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

Littelfuse

力特

TO-263-2

(D2 PAK) A : MIN 9.65 MAX 10.42 B : MIN 8.28 MAX 9.66

文件：60.21 Kbytes Page：1 Pages

AME

安茂微电子

TO-263-2

Carrier Width (W) 24.0-0.1 mm Pitch (P) 4.0-0.1 mm

文件：34.82 Kbytes Page：1 Pages

AME

安茂微电子

TO-263-2L

Plastic-Encapsulate MOSFETS

文件：531.74 Kbytes Page：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

TO-263-2L

Plastic-Encapsulate MOSFETS

文件：624.05 Kbytes Page：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

TO-263-2L

Plastic-Encapsulate MOSFETS

文件：539.25 Kbytes Page：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

TO-263-2L

Packaging for Automatic Handling

文件：67.97 Kbytes Page：5 Pages

ADMOS

TO-263-2L

Plastic-Encapsulate MOSFETS

文件：358.06 Kbytes Page：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

TO-263-3

Carrier Width (W) 24.0-0.1 mm Pitch (P) 4.0-0.1 mm

文件：34.83 Kbytes Page：1 Pages

AME

安茂微电子

TO-263-3

(D2 PAK) A : MIN 9.65 MAX 10.67 B : MIN 8.28 MAX 9.66

文件：60.1 Kbytes Page：1 Pages

AME

安茂微电子

To-263-35W-10R-5%

贴片电阻

Milliohm

毫欧电子

TO-263-3L

Packaging for Automatic Handling

文件：67.97 Kbytes Page：5 Pages

ADMOS

TO-263-5

Carrier Width (W) 24.0-0.1 mm Pitch (P) 4.0-0.1 mm

文件：34.87 Kbytes Page：1 Pages

AME

安茂微电子

TO-263-5

A : MIN 9.800 MAX 10.668 B : MIN 8.200 MAX 9.169

文件：59.77 Kbytes Page：1 Pages

AME

安茂微电子

TO-263-5

5-Lead TO-263 Plastic Surface Mount Package

文件：138.27 Kbytes Page：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TO-263-5L

Packaging for Automatic Handling

文件：67.97 Kbytes Page：5 Pages

ADMOS

TO-263AB

Dual Common Cathode Ultrafast Plastic Rectifier

文件：140.2 Kbytes Page：5 Pages

VishayVishay Siliconix

威世威世科技公司

TO-263AB

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件：1.26527 Mbytes Page：3 Pages

KERSEMI

TO-263AB

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件：1.24605 Mbytes Page：3 Pages

KERSEMI

TO-263AB

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件：1.2457 Mbytes Page：3 Pages

KERSEMI

TO-263AB

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件：1.24591 Mbytes Page：3 Pages

KERSEMI

TO-263AB

Ultrafast Rectifier

文件：135.47 Kbytes Page：5 Pages

VishayVishay Siliconix

威世威世科技公司

TO-263AB

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：162.33 Kbytes Page：5 Pages

VishayVishay Siliconix

威世威世科技公司

TO-263AB

Packaging Information

文件：240.77 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

TO-263AB

Guardring for overvoltage protection

文件：1.94952 Mbytes Page：4 Pages

KERSEMI

TO-263AB

5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

RENESAS

瑞萨

TO-263D2PAK

Sample Instructions for Choosing a Packing Option

文件：306.92 Kbytes Page：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

263AX

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

263CX

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

263

Axial Lead and Cartridge Fuses - Subminiature

文件：63.81 Kbytes Page：1 Pages

Littelfuse

力特

263-R

Class H/K, J and R ferrule and blade fuse reducers

文件：547.66 Kbytes Page：2 Pages

EATON

伊顿

263X

3M??Lapping Film Aluminum Oxide 254X

文件：68.76 Kbytes Page：2 Pages

3M

TO-263产品属性

  • 类型

    描述

  • 型号

    TO-263

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    N-Channel 100-V(D-S) 175 °C MOSFET

TO-263供应商更多...

更新时间：2025-11-21 16:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
贸泽芯城（深圳）电子科技有限公司
TO263SHT
FAIRCHILD/仙童
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
富凯科技(深圳）有限公司
TO293B127-CDZAA
Broadcom Limited
24+
6000
只做原装，欢迎询价，量大价优
询价
中天科工半导体（深圳）有限公司
TO-2810SC-BF
Oasistek
20+
LED
83000
LED原装优势主营型号-可开原型号增税票
询价
现代芯城（深圳）科技有限公司
To-263-35W-75R-5
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市和悦电子贸易有限公司
TO26315ETL06S
VISHAY
TO-263
50000
询价
深圳市灿芯升电子科技有限公司
TO293B127-CDZAA
Broadcom Limited
17+18+22+
25480
原装+实力库存+当天发货
询价

TO-263芯片相关品牌

TO-263规格书下载地址

TO-263参数引脚图相关

TO-263数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示