Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B10

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

Dual Common Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Oxide planar chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency invert

Metal silicon junction, majority carrier conduction

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency invert

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

Guardring for overvoltage protection

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state co • 5.3A, 1200V, TC = 25°C\n• 1200V Switching SOA Capability\n• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150°C\n• Short Circuit Rating\n• Low Conduction Loss\n• Temperature Compensating SABER™ Model\n   Thermal Impedance SPICE Model www.intersil.com/\n• Related Literature\n   - ;

Guardring for overvoltage protection

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Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件：1.24591 Mbytes Page：3 Pages

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件：1.2457 Mbytes Page：3 Pages

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件：1.26527 Mbytes Page：3 Pages

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

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Packaging Information

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Ultrafast Rectifier

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High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual Common Cathode Ultrafast Plastic Rectifier

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SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

Darlington Phototransistor

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