ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive

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Excellent Power Device

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优秀电源器件，逆变器和缓冲器驱动器，适用于通用型应用，双 SOIC8

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC DVR EXPD 25V 1A SOP8 集成电路（IC） 全半桥驱动器

封装/外壳：8-SOIC（0.173"，4.40mm 宽） 包装：管件 描述：IC PWR DRIVER EXPD 1:2 8SOP 集成电路（IC） 配电开关，负载驱动器

High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

High-speed diode

DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage:

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

3.0 mm X 7.0 mm Series

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