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位置：首页 > IC中文资料第312页 > TN26

TN26价格

参考价格：￥4.8103

型号：TN26/15/10-3C90 品牌：FERROXCUBE 备注：这里有TN26多少钱，2025年最近7天走势，今日出价，今日竞价，TN26批发/采购报价，TN26行情走势销售排行榜，TN26报价。

型号	功能描述	生产厂家企业	LOGO
TN2640	N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope	Microchip 微芯科技	Microchip
TN2640	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the	SUTEX	SUTEX
TN2640_V01	N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope	Microchip 微芯科技	Microchip
TN2640K4	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the	SUTEX	SUTEX
TN2640K4-G	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu	SUTEX	SUTEX
TN2640K4-G	N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope	Microchip 微芯科技	Microchip
TN2640LG	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the	SUTEX	SUTEX
TN2640LG-G	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu	SUTEX	SUTEX
TN2640LG-G	N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope	Microchip 微芯科技	Microchip
TN2640N3	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the	SUTEX	SUTEX
TN2640N3-G	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu	SUTEX	SUTEX
TN2640N3-G	N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope	Microchip 微芯科技	Microchip
TN2640ND	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the	SUTEX	SUTEX
TN2640ND	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu	SUTEX	SUTEX
TN26/11-3C20-A113	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/11-3C20-A157	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/11-3C20-A185	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/11-3C20-A201	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/11-3C20-A217	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/10	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/10-3C11	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/10-3C90	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/10-3E25	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/10-4A11	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/11	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/20	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/20-3C11	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/20-3C90	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26/15/20-3E25	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26-15-10	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26-15-11	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26-15-20	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN2640	N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages	Microchip 微芯科技	Microchip
TN2640	MOSFET, N-Channel Enhancement-Mode, 400V, 5.0 Ohm	Microchip 微芯科技	Microchip
TN2640K4	N-Channel MOSFET uses advanced trench technology 文件：1.28086 Mbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
TN2640K4-G	N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages	Microchip 微芯科技	Microchip
TN2640LG-G	N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages	Microchip 微芯科技	Microchip
TN2640N3-G	N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages	Microchip 微芯科技	Microchip
TN26SLASH11-3C20-A113	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH11-3C20-A157	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH11-3C20-A185	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH11-3C20-A201	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH11-3C20-A217	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH10	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH10-3C11	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH10-3C90	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH10-3E25	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH10-4A11	Ferrite toroids 文件：44.82 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH11	Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH20	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH20-3C11	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH20-3C90	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE
TN26SLASH15SLASH20-3E25	Ferrite toroids 文件：45.2 Kbytes Page：3 Pages	FERROXCUBE	FERROXCUBE

TN26产品属性

类型
描述
型号
TN26
制造商
Yageo/Ferroxcube
功能描述
Ferrite toroid ring core 26mm 3C90
制造商
Fernox Cookson Electronics
功能描述
FERRITE SLEEVE

TN26供应商更多...

更新时间：2025-12-10 16:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市美思瑞电子科技有限公司	TN2640N3-G	MICROCHIP/微芯	22+	TO-92-3	12245	现货,原厂原装假一罚十!	询价
深圳市佳鑫美电子科技有限公司	TN2640LG-G	SUPERTE	25+	SOP-8	2760	绝对原装公司现货!17年VIP信誉保证!	询价
深圳市勤思达科技有限公司	TN2640LG	MICROCHIP	24+	SOP8	5000	全新原装正品,现货销售	询价
深圳市赛特兴科技有限公司	TN2640LG	MICROCHIP	23+	SOP8	15	正规渠道,只有原装!	询价
瀚佳科技(深圳)有限公司	TN2640LG	SUPERTEX	24+	SOP8	35400	全新原装现货/假一罚百!	询价
深圳市欧立现代科技有限公司	TN2640LG		24+	SOP-8	6868	原装现货,可开13%税票	询价
深圳市科芯源微电子有限公司	TN2640LG模块	SUPERTEX	25+	SOP-8	54658	百分百原装现货实单必成	询价
深圳市高捷芯城科技有限公司	TN2640N3-G	MICROCHIP(美国微芯)	24+	TO-92	8498	支持大陆交货,美金交易。原装现货库存。	询价
深圳市创盛芯科技有限公司	TN2640LG	MICROCHIP/微芯	25+	SOP8	2084	全新原装正品支持含税	询价
上海金庆电子技术有限公司	TN2640LG	SUPERTEX	新		300	全新原装货期两周	询价

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TN26价格

TN26产品属性

TN26供应商更多...

TN26芯片相关品牌

TN26规格书下载地址

TN26参数引脚图相关

TN26数据表相关新闻

TMUX8108RUMR

TN4050HP-12L2Y

TN4050HP-12GY-TR原装特价现货出售

TN1610H-6FP

TN80C196KB 控制器/单片机IC 代理渠道，进口原装。

TN2015H-6FP正品现货热卖

DdatasheetPDF页码索引