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TN26价格
参考价格：￥4.8103
型号：TN26/15/10-3C90 品牌：FERROXCUBE 备注：这里有TN26多少钱，2025年最近7天走势，今日出价，今日竞价，TN26批发/采购报价，TN26行情走势销售排行榜，TN26报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement-Mode Vertical DMOS FET Features •2VMaximumLowThreshold •HighInputImpedance •LowInputCapacitance •FastSwitchingSpeeds •LowOn-Resistance •FreefromSecondaryBreakdown •LowInputandOutputLeakage Applications •Logic-LevelInterfaces(IdealforTTLandCMOS) •Solid-StateRelays •Battery-Ope | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  |   | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc |  | | |
N-Channel Enhancement-Mode Vertical DMOS FET Features •2VMaximumLowThreshold •HighInputImpedance •LowInputCapacitance •FastSwitchingSpeeds •LowOn-Resistance •FreefromSecondaryBreakdown •LowInputandOutputLeakage Applications •Logic-LevelInterfaces(IdealforTTLandCMOS) •Solid-StateRelays •Battery-Ope | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FET Features •2VMaximumLowThreshold •HighInputImpedance •LowInputCapacitance •FastSwitchingSpeeds •LowOn-Resistance •FreefromSecondaryBreakdown •LowInputandOutputLeakage Applications •Logic-LevelInterfaces(IdealforTTLandCMOS) •Solid-StateRelays •Battery-Ope | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FET Features •2VMaximumLowThreshold •HighInputImpedance •LowInputCapacitance •FastSwitchingSpeeds •LowOn-Resistance •FreefromSecondaryBreakdown •LowInputandOutputLeakage Applications •Logic-LevelInterfaces(IdealforTTLandCMOS) •Solid-StateRelays •Battery-Ope | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FET Features •2VMaximumLowThreshold •HighInputImpedance •LowInputCapacitance •FastSwitchingSpeeds •LowOn-Resistance •FreefromSecondaryBreakdown •LowInputandOutputLeakage Applications •Logic-LevelInterfaces(IdealforTTLandCMOS) •Solid-StateRelays •Battery-Ope | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu | SUTEX Supertex, Inc | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 |  | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
N-Channel MOSFET uses advanced trench technology 文件：1.28086 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | | |
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：44.82 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Gapped ferrite toroids 文件：44.77 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | | |
Ferrite toroids 文件：45.2 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞利浦飞利浦元件公司 | | |
TN26产品属性
- 类型
描述
- 型号
TN26
- 制造商
Yageo/Ferroxcube
- 功能描述
Ferrite toroid ring core 26mm 3C90
- 制造商
Fernox Cookson Electronics
- 功能描述
FERRITE SLEEVE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
SOP-8 |
7500 |
十年品牌!原装现货!!! |
||||
SUPERTEX |
新 |
300 |
全新原装 货期两周 |
||||
SUP |
05+ |
原厂原装 |
4558 |
只做全新原装真实现货供应 |
|||
MICROCHIP |
24+ |
SOP8 |
5000 |
全新原装正品,现货销售 |
|||
SUPERTEX |
SOP8 |
2000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MICROCHIP/微芯 |
22+ |
TO-92-3 |
12245 |
现货,原厂原装假一罚十! |
|||
SUPERTE |
24+ |
SOP-8 |
2760 |
绝对原装公司现货!17年VIP信誉保证! |
|||
MICROCHIP |
24+ |
SOP8 |
12000 |
原装 |
|||
SUPERTEX |
24+ |
TO-92 |
6010 |
只做原装正品 |
|||
supertex |
24+ |
TO-252 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
TN26芯片相关品牌
TN26规格书下载地址
TN26参数引脚图相关
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- TN2404K-T1-E3
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- TN2-4.5V
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