TN2640价格

参考价格:¥11.1132

型号:TN2640K4-G 品牌:Supertex 备注:这里有TN2640多少钱,2026年最近7天走势,今日出价,今日竞价,TN2640批发/采购报价,TN2640行情走势销售排行榜,TN2640报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TN2640

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

SUTEX

TN2640

N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

MICROCHIP

微芯科技

TN2640

MOSFET, N-Channel Enhancement-Mode, 400V, 5.0 Ohm

MICROCHIP

微芯科技

TN2640

N-Channel Enhancement-Mode Vertical DMOS FET

文件:926.36 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

SUTEX

N-Channel MOSFET uses advanced trench technology

文件:1.28086 Mbytes Page:5 Pages

DOINGTER

杜因特

N-Channel Enhancement-Mode Vertical DMOS FET

文件:926.36 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:926.36 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:926.36 Kbytes Page:14 Pages

MICROCHIP

微芯科技

Silicon NPN Transistor Color TV Horizontal Deflection Output

Features: • High Speed • High Collector–Emitter Breakdown Voltage • High Reliability • On–Chip Damper Diode

NTE

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

SUTEX

Dual Adjustable Step-Down Switching Power Supply Controller

文件:504.42 Kbytes Page:18 Pages

NSC

国半

Dual Adjustable Step-Down Switching Power Supply Controller

文件:504.42 Kbytes Page:18 Pages

NSC

国半

TN2640产品属性

  • 类型

    描述

  • 型号

    TN2640

  • 制造商

    SUPERTEX

  • 制造商全称

    SUPERTEX

  • 功能描述

    N-Channel Enhancement-Mode Vertical DMOS FETs

更新时间:2026-3-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology / Atmel
25+
TO-92-3
6843
样件支持,可原厂排单订货!
Microchip Technology / Atmel
25+
TO-92-3
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
SUPERTEX
2026+
SOP-8
54658
百分百原装现货 实单必成
SUPERTEX
24+
SOP8
35400
全新原装现货/假一罚百!
MICROCHIP
20+
SOP8
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICROCHIP(美国微芯)
2021+
TO-92-3
499
SUPERTEX
24+
TO-92
6010
只做原装正品
Microchip
22+
TO2263 TO923 (TO226AA)
9000
原厂渠道,现货配单
MICROCHIP/微芯
24+
N/A
5000
原装分货 强势渠道
SUPERTE
25+
SOP-8
2760
绝对原装公司现货!17年VIP信誉保证!

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