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TN2640价格
参考价格：￥11.1132
型号：TN2640K4-G 品牌：Supertex 备注：这里有TN2640多少钱，2026年最近7天走势，今日出价，今日竞价，TN2640批发/采购报价，TN2640行情走势销售排行榜，TN2640报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TN2640 | N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX |   | |
TN2640 | N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | MICROCHIP 微芯科技 | | |
TN2640 | MOSFET, N-Channel Enhancement-Mode, 400V, 5.0 Ohm | MICROCHIP 微芯科技 | | |
TN2640 | N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | |
N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu | SUTEX | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.28086 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
Silicon NPN Transistor Color TV Horizontal Deflection Output Features: • High Speed • High Collector–Emitter Breakdown Voltage • High Reliability • On–Chip Damper Diode | NTE | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
Dual Adjustable Step-Down Switching Power Supply Controller 文件：504.42 Kbytes Page：18 Pages | NSC 国半 | | ||
Dual Adjustable Step-Down Switching Power Supply Controller 文件：504.42 Kbytes Page：18 Pages | NSC 国半 | |
TN2640产品属性
- 类型
描述
- 型号
TN2640
- 制造商
SUPERTEX
- 制造商全称
SUPERTEX
- 功能描述
N-Channel Enhancement-Mode Vertical DMOS FETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP |
24+ |
SOP8 |
25836 |
新到现货，只做全新原装正品 |
|||
SUPERTEX |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
SUPERTEX |
24+ |
TO-92 |
6010 |
只做原装正品 |
|||
SUP |
05+ |
原厂原装 |
4558 |
只做全新原装真实现货供应 |
|||
SUPERTEX |
23+24 |
SOP-8 |
29860 |
原装原盘原标,提供BOM一站式配单 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROCIHIP |
23+ |
SOP |
50000 |
全新原装正品现货,支持订货 |
|||
MICROCHIP/微芯 |
22+ |
TO-92-3 |
12245 |
现货,原厂原装假一罚十! |
|||
MICROCHIP/微芯 |
25+ |
SOP8 |
2084 |
全新原装正品支持含税 |
|||
TN |
24+ |
SOP |
60000 |
TN2640规格书下载地址
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