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TN2640价格
参考价格：￥11.1132
型号：TN2640K4-G 品牌：Supertex 备注：这里有TN2640多少钱，2025年最近7天走势，今日出价，今日竞价，TN2640批发/采购报价，TN2640行情走势销售排行榜，TN2640报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TN2640 | N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX |   | |
TN2640 | N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | Microchip 微芯科技 | | |
TN2640 | MOSFET, N-Channel Enhancement-Mode, 400V, 5.0 Ohm | Microchip 微芯科技 | | |
TN2640 | N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | Microchip 微芯科技 | | |
N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu | SUTEX | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.28086 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：926.36 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
Turn Counting Dial Features: • 7/8” diameter • Analog | TTELEC | | ||
Glossy and Thick Panel Glossy Plugs 文件：141.05 Kbytes Page：1 Pages | Heyco | | ||
Turn Counting Dial 文件：500.67 Kbytes Page：2 Pages | TTELEC | | ||
7/8 Diameter Analog Turns Counting Dial 文件：48.5 Kbytes Page：2 Pages | BITECH | | ||
Intelligent multipower digital ballast for fluorescent lamps 文件：1.9337 Mbytes Page：36 Pages | STMICROELECTRONICS 意法半导体 | |
TN2640产品属性
- 类型
描述
- 型号
TN2640
- 制造商
SUPERTEX
- 制造商全称
SUPERTEX
- 功能描述
N-Channel Enhancement-Mode Vertical DMOS FETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
24+ |
TO-252 |
2664 |
||||
Microchip |
22+ |
TO2263 TO923 (TO226AA) |
9000 |
原厂渠道,现货配单 |
|||
TN |
24+ |
SOP |
60000 |
||||
MICROCIHIP |
23+ |
SOP |
50000 |
全新原装正品现货,支持订货 |
|||
MICROCHIP |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
MICROCHIP |
24+ |
SOP8 |
5000 |
全新原装正品,现货销售 |
|||
MICROCHIP |
2511 |
SOP8 |
8484 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
MICROCHIP |
24+ |
SOP8 |
25836 |
新到现货，只做全新原装正品 |
|||
MICROCHIP/微芯 |
24+ |
N/A |
5000 |
原装分货 强势渠道 |
|||
SUPERTE |
25+ |
SOP-8 |
2760 |
绝对原装公司现货!17年VIP信誉保证! |
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