振动传感器

TM6603是一款专为解决在驱动离心旋转质量制动器（ERM）触觉反馈元件中常见障碍的触觉反馈驱动器。TM6603还被用于具有低延迟、极高的效率、以及大驱动强度的便携式器件中常用制动器提供驱动力量。TM6603自动输入电平转换在无需增加额外的外部元件的情况下解决了低电压PWM源的问题，所以如果数字1/0电平变化时，输出电压不会改变。TM6603还有电源校正功能来确保无电源调节时的恒定振动强度，从而允许与一个高效直流电池连接。本产品性能优良，质量可靠。 • 灵活触控反馈/Vibra驱动程序-ERM（离心旋转质量）\n• 持续振动强度超过供应范围\n• 自动输入电平转换\n• 0%到100%占空比控制范围\n• 2.7V至5.2V的宽电源电压范围\n• 1.8V兼容，5V容限数字引脚\n• 封装形式：SOT23-6、DFN6H;

RF AMPLIFIER

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RF AMPLIFIER MODEL

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RF AMPLIFIER MODEL

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Low Phase Noise Amplifiers

Synchronous-Rectified Buck MOSFET Drivers

Synchronous-Rectified Buck MOSFET Drivers The HIP6601 and HIP6603 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP630x Multi-Phase Buck PWM controller a

Synchronous-Rectified Buck MOSFET Drivers

Synchronous-Rectified Buck MOSFET Drivers The HIP6601 and HIP6603 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP630x Multi-Phase Buck PWM controller a

HEXFETPower MOSFET

Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

Ultrahigh-Speed Switching Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting • Halogen free conplaiance

9 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

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