HEXFETPower MOSFET

Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

PHASE SHIFTER DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

文件：175.77 Kbytes Page：3 Pages

1200 MHz to 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：834.01 Kbytes Page：32 Pages

2100 MHz to 2600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：504.01 Kbytes Page：24 Pages

2100 MHz to 2600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：504.01 Kbytes Page：24 Pages