Ultrahigh-Speed Switching Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting • Halogen free conplaiance

P-Channel Power MOSFET

Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting • Halogen free conplaiance

P 沟道功率 MOSFET，-50V，-0.14A，23 Ω，双 MCPH6

MCH6603 是一款 P 沟道功率 MOSFET，-50V，-0.14A，23 Ω，双 MCPH6，适用于通用开关应用。 • Low ON-resistance\n• Ultrahigh-speed switching\n• 1.5V drive\n• Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting\n• Halogen free conplaiance;

General-Purpose Switching Device Applications

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P-Channel Power MOSFET

Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting • Halogen free conplaiance

General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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Synchronous-Rectified Buck MOSFET Drivers

Synchronous-Rectified Buck MOSFET Drivers The HIP6601 and HIP6603 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP630x Multi-Phase Buck PWM controller a

Synchronous-Rectified Buck MOSFET Drivers

Synchronous-Rectified Buck MOSFET Drivers The HIP6601 and HIP6603 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP630x Multi-Phase Buck PWM controller a

HEXFETPower MOSFET

Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

9 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

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