SPI Programmable H-Bridge

Functional Description The TLE8209-2 is a SPI programmable H-bridge, designed for the control of DC motors in safety critical automotive applications. It features four selectable current ranges, two selectable slew rate settings and extensive diagnosis via SPI. The device monitors the digital sup

SPI Programmable H-Bridge

Functional Description The TLE8209-2SA is a SPI programmable H-bridge, designed for the control of DC motors in safety critical automotive applications. It features four selectable current ranges, two selectable slew rate settings and extensive diagnosis via SPI. The device monitors the digital s

MOTIX ™ TLE8209-2 是一款 SPI 可编程 H 桥，专为安全关键型汽车应用中的直流电机控制而设计

TLE8209-2是一款SPI可编程H桥，专为安全关键汽车应用中的直流电机控制而设计。它具有四个可选电流范围，两个可选的转换速度设置和通过SPI进行的广泛诊断。该器件监视数字电源电压V DD，并在V DD过压或欠压时关闭输出级，从而在数字控制电路出现故障时提供安全的开关路径。为了降低极端热条件下的功耗，当结温超过165°C时，电流限制阈值会线性降低。 SPI中设有热警告位。两个半桥也可以独立使用，以驱动两个独立的负载，如螺线管或单向直流电机。 • 可编程电流限制范围为1.5至8.6 A（典型值）。\n• 全路径R DSon为240mΩ（典型值为Tj = 25°C）\n• 电池电源电压运行范围：4.5 V至 28 V\n• 逻辑电源电压运行范围：4.4 至5.25 V\n• 低待机电流（典型值8μA）\n• 兼容TTL/ CMOS 的逻辑输入\n• 所有I / O引脚均可承受高达18 V的过压\n• 启用和禁用输入\n• 短路保护和过温保护\n• VS欠压保护\n• V DD过压和欠压保护\n• 关闭条件下的开路负载检测\n• 温度相关的电流降低\n• 通过SPI接口提供广泛的诊断功能\n• 状态标志，用于无SPI的基本诊断\n• 可;

SPI Programmable H-Bridge

Functional Description The TLE8209-2 is a SPI programmable H-bridge, designed for the control of DC motors in safety critical automotive applications. It features four selectable current ranges, two selectable slew rate settings and extensive diagnosis via SPI. The device monitors the digital sup

马达/运动/点火控制器和驱动器 PWTRN H-BRIDGES

封装/外壳：20-SOIC（0.433"，11.00mm 宽）裸露焊盘 功能：驱动器 - 全集成，控制和功率级 包装：管件 描述：IC MOTOR DRIVER 4.4V-5.25V 20DSO 集成电路（IC） 电机驱动器，控制器

马达/运动/点火控制器和驱动器 SPI Programmable H-Bridge

Short circuit and overtemperature protection

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封装/外壳：20-SOIC（0.433"，11.00mm 宽）裸露焊盘 功能：驱动器 - 全集成，控制和功率级 包装：管件 描述：IC MOTOR DRIVER 4.4V-5.25V 20DSO 集成电路（IC） 电机驱动器，控制器

T-13/4 Super Ultra-Bright LED Lamps

Description These untinted, nondiffused solid state lamps are designed with special internal optics to give a very high luminous intensity within a well defined viewing angle. The LED materials used within these devices is specifically grown to assure the high light output performance these lamps

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications ● Small footprint due to small and thin package ● Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 10 S (typ.) ● Low leakage current: IDSS = 10 µA (max

High performance, Low Cost 20 pin OTP

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.) • Low leakage current: ID

Surface Mount Microwave Schottky Mixer Diodes

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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