GMR-Based Angular Sensor for Rotor Position Sensing

文件：2.72284 Mbytes Page：57 Pages

GMR-Based Angular Sensor for Rotor-Position Sensing

文件：1.45033 Mbytes Page：64 Pages

GMR-Based Angular Sensor for Rotor Position Sensing

XENSIV ™ - TLE5012B E3005 磁角度传感器，适用于汽车应用中的角度位置传感

The TLE5012B is a 360° angle sensor that detects the orientation of a magnetic field. This is achieved by measuring sine and cosine angle components with monolithic integrated Giant Magneto Resistance (iGMR) elements. These raw signals (sine and cosine) are digitally processed internally to calculat • Giant Magneto Resistance (GMR)-based principle\n• Integrated magnetic field sensing for angle measurement\n• 360° angle measurement with revolution counter and angle speed measurement\n• Two separate highly accurate single bit SD-ADC\n• 15 bit representation of absolute angle value on the output (;

XENSIV ™ - TLE5012B E5000 磁角度传感器，带 PWM - 推挽配置 - 接口

The TLE5012B is a 360° angle sensor that detects the orientation of a magnetic field. This is achieved by measuring sine and cosine angle components with monolithic integrated Giant Magneto Resistance (iGMR) elements. These raw signals (sine and cosine) are digitally processed internally to calculat • Giant Magneto Resistance (GMR)-based principle\n• Integrated magnetic field sensing for angle measurement\n• 360° angle measurement with revolution counter and angle speed measurement\n• Two separate highly accurate single bit SD-ADC\n• 15 bit representation of absolute angle value on the output (;

丝印代码：012B1000；TLx5012B 2go Evaluation Kit

1 General description The TLx5012B 2go is a budget-priced evaluation kit to evaluate several derivatives of the Infineon TLx5012B GMR angle sensor: • TLx5012B E1000: industrial version with IIF interface • TLx5012B E1000: automotive version with IIF interface • TLx5012B E5000: automotive vers

丝印代码：012B3005；TLx5012B 2go Evaluation Kit

1 General description The TLx5012B 2go is a budget-priced evaluation kit to evaluate several derivatives of the Infineon TLx5012B GMR angle sensor: • TLx5012B E1000: industrial version with IIF interface • TLx5012B E1000: automotive version with IIF interface • TLx5012B E5000: automotive vers

丝印代码：012B5000；TLx5012B 2go Evaluation Kit

1 General description The TLx5012B 2go is a budget-priced evaluation kit to evaluate several derivatives of the Infineon TLx5012B GMR angle sensor: • TLx5012B E1000: industrial version with IIF interface • TLx5012B E1000: automotive version with IIF interface • TLx5012B E5000: automotive vers

丝印代码：012B5020；TLx5012B 2go Evaluation Kit

1 General description The TLx5012B 2go is a budget-priced evaluation kit to evaluate several derivatives of the Infineon TLx5012B GMR angle sensor: • TLx5012B E1000: industrial version with IIF interface • TLx5012B E1000: automotive version with IIF interface • TLx5012B E5000: automotive vers

丝印代码：012B9000；TLx5012B 2go Evaluation Kit

1 General description The TLx5012B 2go is a budget-priced evaluation kit to evaluate several derivatives of the Infineon TLx5012B GMR angle sensor: • TLx5012B E1000: industrial version with IIF interface • TLx5012B E1000: automotive version with IIF interface • TLx5012B E5000: automotive vers

TLx5012B 2go Evaluation Kit

1 General description The TLx5012B 2go is a budget-priced evaluation kit to evaluate several derivatives of the Infineon TLx5012B GMR angle sensor: • TLx5012B E1000: industrial version with IIF interface • TLx5012B E1000: automotive version with IIF interface • TLx5012B E5000: automotive vers

GMR-Based Angular Sensor for Rotor-Position Sensing

文件：1.45033 Mbytes Page：64 Pages

Giant Magneto Resistance (GMR)-based principle

文件：2.43361 Mbytes Page：50 Pages

GMR-Based Dual Die Angle Sensor

文件：674.09 Kbytes Page：17 Pages

封装/外壳：16-TSSOP（0.154"，3.90mm 宽） 包装：管件 描述：SPEED SENSORS 16TDSO 传感器，变送器 位置传感器 - 角度、线性位置测量

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：SENSOR ANGLE 360DEG SMD 传感器，变送器 位置传感器 - 角度、线性位置测量

GMR-Based Angular Sensor for Rotor-Position Sensing

文件：1.45033 Mbytes Page：64 Pages

GMR-Based Angular Sensor for Rotor Position Sensing

文件：2.72284 Mbytes Page：57 Pages

GMR-Based Angular Sensor for Rotor Position Sensing

文件：2.72284 Mbytes Page：57 Pages

GMR-Based Angular Sensor for Rotor-Position Sensing

文件：1.45033 Mbytes Page：64 Pages

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package