Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ● Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 34 S (typ.) ● Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) ● Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch single 30V VDSS 60V)

N-Channel 60 V (D-S) MOSFET

文件：2.13845 Mbytes Page：8 Pages

N-Channel 60 V (D-S) MOSFET

文件：2.14023 Mbytes Page：8 Pages

Power MOSFET (N-ch single 30V VDSS 60V)

Schottky Barrier Diode

FEATURES * TO-220AB Case * Fully Molded * Dual Diodes – Cathode Common * Low Forward Voltage Drop * High Surge Capability * Tj=150 °C operation

LOW FORWARD VOLTAGE DROP

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Low Forward Voltage Drop * High Surge Capability * Tj=150 °C operation

Schottky Barrier Diode

FEATURES * Similar to TO-220AB Case * Dual Diodes – Cathode Common * Low Forward Voltage Drop * High Surge Capability * Tj=150 °C operation

Schottky Barrier Diode

文件：568.91 Kbytes Page：7 Pages

Glass Passivated Hyperfast Recovery Rectifier

文件：830.22 Kbytes Page：3 Pages