Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)

15Amperes,600Volts Single Ultra Fast Recovery Epitaxial Diode

GENERAL DESCRIPTION APT15D60B using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. PRODUCT FEATURE • Ultrafast Recovery Time • Soft Recovery Characteristics • Low Recovery Loss • Low Forward Voltage • High Surge Current Capability

Ultrafast Rectifier

FEATURES · Low forward voltage drop · Low Leakage Current · Ultrafast recovery time APPLICATIONS · Switch mode Power Supply · Inverters · Motor Controllers · Converters

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-247 Package • Low Forward Voltage • Low

ULTRAFAST SOFT RECOVERY RECTIFIER DIODES

PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-247 Package • Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density PRODUCT

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

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