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位置：首页 > IC中文资料第6050页 > TK10A

TK10A价格

参考价格：￥5.3410

型号：TK10A50D(STA4,Q,M) 品牌：Toshiba 备注：这里有TK10A多少钱，2025年最近7天走势，今日出价，今日竞价，TK10A批发/采购报价，TK10A行情走势销售排行榜，TK10A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TK10A

Topstek Current Transducer

文件：110.32 Kbytes Page：3 Pages

TOPSTEK

TK10A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en • Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 500

TOSHIBA

东芝

TK10A50D

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TK10A50D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

TK10A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

SYC

TK10A50W

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

TOSHIBA

东芝

TK10A55D

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TK10A55D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=550V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

TK10A60D

Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

TOSHIBA

东芝

TK10A60D

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TK10A60D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=550V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

TK10A60D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.75Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

TK10A60D5

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TK10A60D5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.05Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

TK10A60W

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.38Ω • Easy to control Gate switching • Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.5 mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance an

ISC

无锡固电

TK10A60W

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) Applications • Switching Voltage Regulators

TOSHIBA

东芝

TK10A60W5

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 85 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

TOSHIBA

东芝

TK10A80E

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

TK10A80W

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45mA)

TOSHIBA

东芝

TK10A50W

Power MOSFET (N-ch 250V VDSS 500V)

TOSHIBA

东芝

TK10A50W

isc N-Channel MOSFET Transistor

文件：289.02 Kbytes Page：2 Pages

ISC

无锡固电

TK10A55D

Power MOSFET (N-ch 500V VDSS 700V)

TOSHIBA

东芝

TK10A60D

Power MOSFET (N-ch 500V VDSS 700V)

TOSHIBA

东芝

TK10A60W

N-Channel 650V (D-S) Power MOSFET

文件：1.07069 Mbytes Page：9 Pages

VBSEMI

微碧半导体

TK10A60W5

isc N-Channel MOSFET Transistor

文件：289.41 Kbytes Page：2 Pages

ISC

无锡固电

TK10A80E

MOSFETs Silicon N-Channel MOS (?-MOS??

文件：225.26 Kbytes Page：9 Pages

TOSHIBA

东芝

TK10A80W

isc N-Channel MOSFET Transistor

文件：289.27 Kbytes Page：2 Pages

ISC

无锡固电

TK10A产品属性

  • 类型

    描述

  • 型号

    TK10A

  • 制造商

    TOPSTEK

  • 制造商全称

    TOPSTEK

  • 功能描述

    Topstek Current Transducer

TK10A供应商更多...

更新时间：2025-11-20 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市润联芯城科技有限公司
TK10A60D
东芝/TOSHIBA
18+
TO-220F
8621
只做原装正品
询价
中天科工半导体（深圳）有限公司
TK10A50D
TOSHIBA/东芝
25+
TO-220F
45000
TOSHIBA/东芝全新现货TK10A50D即刻询购立享优惠#长期有排单订
询价
深圳市正纳电子有限公司
TK10A50D
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市拓亿芯电子有限公司
TK10A80E
TOSHIBA/东芝
25+
TO-220F
9000
只做进口原装假一罚百
询价
贸泽芯城（深圳）电子科技有限公司
TK10A50
FUJI/富士电机
23+
TO-TO-220F
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
深圳市赛美科科技有限公司
TK10A50D
TOSHIBA/东芝
TO-220F
8790
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市明嘉莱科技有限公司
TK10A50D
TOSHIBA/东芝
25+
TO-220F
860000
明嘉莱只做原装正品现货
询价
深圳市得捷芯城科技有限公司
TK10A60D
TOSHIBA(东芝)
24+
-
8309
原厂可订货,技术支持,直接渠道。可签保供合同
询价
瀚佳科技(深圳)有限公司
TK10A80E
TOSHIBA
24+
TO220F
9800
一级代理/全新原装现货/长期供应!
询价
深圳市胜彬电子有限公司
TK10A60D(STA4.X.S)
TOSHIBA/东芝
2152+
TO220F
8000
原装正品假一罚十
询价

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